Datasheet

MCP9843/98243
DS22153C-page 4 © 2009 Microchip Technology Inc.
MCP98243 EEPROM DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
DD
= 1.8V to 5.5V, GND = Ground,
and T
A
= -20°C to +125°C.
Parameters Sym Min Typ Max Unit Conditions
Power Supply
Operating Voltage Range V
DD
1.8 — 5.5 V
Current, EEPROM write I
DD_EE
— 1100 2000 µA Sensor in Shutdown Mode (for t
WC
),
(Note 1)
Current, EEPROM read I
DD_EE
— 100 500 µA Sensor in Shutdown Mode (Note 1)
Power On Reset (POR) V
POR_EE
— 1.6 — V EEPROM
Write Cycle time (byte/page) t
WC
—3 5 ms
Endurance T
A
= +25°C — — 1M — cycles Number of Write Cycles, V
DD
= 5V (Note 2)
EEPROM Write Temperature EE
WRITE
0— 85 °C
EEPROM Read Temperature EE
READ
-40 — 125 °C For minimum read temperature, see Note 2
Write Protect Voltage
SWP and CWP Voltage V
HV
7 — 12 V Applied at A0 pin (Note 3)
PWP Voltage — V
DD
—V
Note 1: For V
DD
ranges of 1.8V to the temperature sensor V
POR_TS
, the temperature sensor becomes partially biased and
consumes 80 µA (typical) until the sensor POR resets and acknowledges a shutdown command. See Figure 2-15.
2: Characterized but not production tested. For endurance estimates in a specific application, please consult the Total
Endurance™ Model which can be obtained from Microchip’s web site at www.microchip.com.
3: The range of voltage applied at A0 pin for Permanent Write Protect is GND to V
DD
+ 1V. See Figure 2-13 and
Section 5.3.3 “Write Protection”.
INPUT/OUTPUT PIN DC CHARACTERISTICS (NOTE 1)
Electrical Specifications: Unless otherwise indicated, V
DD
= 1.8V to 5.5V, GND = Ground and
T
A
= -20°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Serial Input/Output (SCL, SDA, A0, A1, A2) (Note 2)
Input
High-level Voltage V
IH
0.7V
DD
——V
Low-level Voltage V
IL
——0.3V
DD
V
Input Current I
IN
— — ±5 µA SDA and SCL only
Input Impedance (A0, A1, A2) Z
IN
—1—MΩ V
IN
> V
IH
Input Impedance (A0, A1, A2) Z
IN
—200—kΩ V
IN
< V
IL
Output (SDA only)
Low-level Voltage V
OL
——0.4VI
OL
= 3 mA
High-level Current (leakage) I
OH
—— 1µAV
OH
= V
DD
Low-level Current I
OL
6——mAV
OL
= 0.6V
Capacitance C
IN
—5—pF
SDA and SCL Inputs
Hysteresis V
HYST
— 0.05V
DD
—VV
DD
> 2V
—0.1V
DD
—VV
DD
< 2V
Spike Supression T
SP
— — 50 ns
Note 1: These specifications apply for the Temperature Sensor and EEPROM.
2: For V
DD
ranges of 1.8V to the temperature sensor V
POR_TS
, the temperature sensor becomes partially
biased and consumes 80 µA (typical) until the sensor POR resets and acknowledges a shutdown
command. See Figure 2-15.