Datasheet

© 2009 Microchip Technology Inc. DS22153C-page 3
MCP9843/98243
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
.................................................................................. 6.0V
Voltage at all Input/Output pins ............... GND – 0.3V to 6.0V
Pin A0 ................................................... GND – 0.3V to 12.5V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-40°C to +125°C
Junction Temperature (T
J
) .......................................... +150°C
ESD protection on all pins (HBM:MM) ................. (4 kV:300V)
Latch-Up Current at each pin (25°C) ....................... ±200 mA
†Notice: Stresses above those listed under “Maximum
ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
TEMPERATURE SENSOR DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, V
DD
= 3.0V to 3.6V, GND = Ground,
and T
A
= -20°C to +125°C.
Parameters Sym Min Typ Max Unit Conditions
Temperature Sensor Accuracy
+75°C < T
A
≤ +95°C T
ACY
-1.0 ±0.2 +1.0 °C JC42.4 - TSE2002B3
Grade B Accuracy Specification
+40°C < T
A
≤ +125°C -2.0 ±0.5 +2.0 °C
-20°C < T
A
≤ +125°C -3.0 ±1 +3.0 °C
T
A
= -40°C — -1 — °C
Temperature Conversion Time
0.25°C/bit t
CONV
— 65 125 ms 15 s/sec (typical) (See Section 5.2.4)
Power Supply
Specified Voltage Range V
DD
3.0 — 3.6 V JC42.4 Specified Voltage Range
Operating Voltage Range V
DD
2.7 — 5.5 V Note 1
Operating Current I
DD_TS
— 200 500 µA EEPROM Inactive
Shutdown Current - MCP9843
MCP98243
I
SHDN
— 1 2 µA EEPROM Inactive, I
2
C Bus Inactive
—1 3 µA
Power On Reset (POR) V
POR_TS
— 2.2 — V Threshold for falling V
DD
voltage
Power Supply Rejection,
T
A
= +25°C
Δ°C/ΔV
DD
—±0.3 — °C/VV
DD
= 2.7V to 5.5V
— ±0.15 — °C V
DD
= 3.3V+150 mV
PP AC
(0 to 1 MHz)
Event Output (Open-Drain output, external pull-up or pull-down resistor required), see Section 5.2.3
High-level Current (leakage) I
OH
—— 1 µAV
OH
= V
DD
(Active-Low, Pull-up
Resistor)
Low-level Voltage V
OL
—— 0.4 VI
OL
= 3 mA (Active-Low, Pull-up
Resistor)
Low-level Current (leakage) I
OL
—— 1 µAV
OL
= V
SS
(Active-High, Pull-down
Resistor)
High-level Voltage V
OH
——V
DD
-0.5 V I
OH
= 3 mA (Active-High, Pull-down
Resistor)
Thermal Response, from +25°C (Air) to +125°C (oil bath)
DFN/UDFN/TDFN-8 t
RES
— 0.7 — s Time to 63% (89°C)
TSSOP-8 — 1.4 — s
Note 1: Characterized but not production tested. Also, see Section 2.0 “Typical Performance Curves”.