Datasheet

 2013 Microchip Technology Inc. DS25159A-page 3
MCP87130
Diode Characteristics
Diode Forward Voltage V
FD
—0.8 1 VI
S
= 10A, V
GS
= 0V
Reverse Recovery Charge Q
RR
—7—nCI
S
= 10A, di/dt = 300 A/µs
Reverse Recovery Time t
rr
—9.5—nSI
S
= 10A, di/dt = 300 A/µs
Avalanche Characteristics
Avalanche Energy E
AS
4.5 — — mJ I
D
= 3A, L = 1 mH,
R
G
= 25
TEMPERATURE CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Junction Temperature Range T
J
-55 — 150 °C
Storage Temperature Range T
A
-55 — 150 °C
Package Thermal Resistances
Thermal Resistance Junction-to-X, 8L 5x6-PDFN R
θJX
——56°C/WNote 1
Thermal Resistance Junction-to-Case, 8L 5x6-PDFN R
θJC
——2.1°C/WNote 2
Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN R
θJX
——66°C/WNote 1
Thermal Resistance Junction-to-Case,
8L 3.3x3.3-PDFN
R
θJC
——3.5°C/WNote 2
Note 1:
R
θJX
is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of
2 oz. copper. This characteristic is dependent on user’s board design.
2: R
θJC
is determined using JEDEC 51-14 Method. This characteristic is determined by design.
DC ELECTRICAL CHARACTERISTICS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C
Parameters Sym Min Typ Max Units Conditions