Datasheet

MCP87090
DS22332A-page 4  2013 Microchip Technology Inc.
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C.
FIGURE 2-1: Typical Output
Characteristics.
FIGURE 2-2: Typical Transfer
Characteristics.
FIGURE 2-3: On Resistance vs.
Gate-to-Source Voltage.
FIGURE 2-4: Normalized On Resistance
vs. Temperature.
FIGURE 2-5: Gate-to-Source Voltage vs.
Gate Charge.
FIGURE 2-6: Capacitance vs.
Drain-to-Source Voltage.
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
20
30
40
50
60
Drain Current (A)
V
GS
= 3V
V
GS
= 10V
V
GS
= 4.5V
0
10
20
0.0 1.0 2.0 3.0
I
D
-
V
DS
 Drain-to-Source Voltage (V)
V
GS
= 2.5V
20
30
40
50
60
D
rain Current (A)
T
C
= +25°C
V
DS
= 5V
0
10
20
1.25 1.5 1.75 2 2.25 2.5 2.75 3 3.25
I
D
-
D
V
GS
- Gate-to-Source Voltage (V)
T
C
= +125°C
T
C
= -55°C
12
14
16
18
20
-
On-State Resistance
(m)
T
C
= +125°C
I
D
= 17A
6
8
10
0246810
R
DS(ON)
-
V
GS
- Gate-to-Source Voltage (V)
T
C
= +25°C
1
1.2
1.4
1.6
1.8
m
alized On-State
R
esistance
I
D
= 17A
V
GS
= 4.5V
0.4
0.6
0.8
-60 -40 -20 0 20 40 60 80 100 120 140 160
Nor
m
R
T
C
- Case Temperature (°C)
4
5
6
7
8
9
10
-
to-Source Voltage (V)
I
D
= 17A
V
DS
= 5V
V
DS
= 12.5V
0
1
2
3
024681012141618
V
GS
-Gate
-
Q
G
- Gate Charge (nC)
0.4
0.5
0.6
0.7
0.8
0.9
1
C
apacitance (nF)
C
ISS
f= 1 MHz
V
GS
= 0V
0
0.1
0.2
0.3
0 5 10 15 20
C -
C
V
DS
- Drain-to-Source Voltage (V)
C
OSS
C
RSS