Datasheet

ManualsBrandsMICROCHIP TECHNOLOGY ManualsFETsMCP87090T-U/LC, MOSFET

 2013 Microchip Technology Inc. DS22332A-page 1

MCP87090

Features:

• Low Drain-to-Source On Resistance (R

DS(ON)

)

• Low Total Gate Charge (Q

) and Gate-to-Drain

Charge (Q

)

• Low Series Gate Resistance (R

)

• Capable of Short Dead-Time Operation

• RoHS Compliant

Applications:

• Point-of-Load DC-DC Converters

• High Efficiency Power Management in Servers,

Networking, and Automotive Applications

Description:

The MCP87090 is an N-Channel power MOSFET in a

popular PDFN 5 mm x 6 mm package, as well as a

PDFN 3.3 mm x 3.3 mm package. Advanced

packaging and silicon processing technologies allow

the MCP87090 to achieve a low Q

for a given R

DS(ON)

value, resulting in a low Figure of Merit (FOM).

Combined with low R

, the low FOM of the MCP87090

device allows high efficiency power conversion with

reduced switching and conduction losses.

Package Type

Product Summary Table: Unless otherwise indicated, T

= +25˚C

Parameters Sym Min Typ Max Units Conditions

Operating Characteristics

Drain-to-Source Breakdown Voltage BV

DSS

25 — — V V

= 0V, I

= 250 µA

Gate-to-Source Threshold Voltage V

GS(TH)

1.1 1.35 1.7 V V

= V

, I

= 250 µA

Drain-to-Source On Resistance R

DS(ON)

—1012 mΩ V

= 4.5V, I

= 17A

— 8.5 10.5 mΩ V

= 10V, I

= 17A

Total Gate Charge Q

— 7.5 10 nC V

= 12.5V, I

= 17A, V

= 4.5V

Gate-to-Drain Charge Q

—2.8— nCV

= 12.5V, I

= 17A

Series Gate Resistance R

—1.8— Ω

Thermal Characteristics

Thermal Resistance Junction-to-X, 8L 3.3x3.3-PDFN R

θJX

——66°C/WNote 1

Thermal Resistance Junction-to-Case, 8L 3.3x3.3-PDFN R

θJC

——3.5°C/WNote 2

Thermal Resistance Junction-to-X, 8L 5x6-PDFN R

θJX

——56°C/WNote 1

Thermal Resistance Junction-to-Case, 8L 5x6-PDFN R

θJC

——2.0°C/WNote 2

Note 1: R

θJX

is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1” x 1” mounting pad of 2 oz. copper.

This characteristic is dependent on user’s board design.

2: R

θJC

is determined using JEDEC 51-14 Method. This characteristic is determined by design.

PDFN 5 x 6

PDFN 3.3 x 3.3

High-Speed N-Channel Power MOSFET

Summary of content (18 pages)

PAGE 1
MCP87090 High-Speed N-Channel Power MOSFET Features: Description: • Low Drain-to-Source On Resistance (RDS(ON)) • Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) • Low Series Gate Resistance (RG) • Capable of Short Dead-Time Operation • RoHS Compliant The MCP87090 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package, as well as a PDFN 3.3 mm x 3.3 mm package.
PAGE 2
MCP87090 1.0 EAS Avalanche Energy .................................... 84.5 mJ ELECTRICAL CHARACTERISTICS ID = 13A, L = 1 mH, RG = 25Ω † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended.
PAGE 3
MCP87090 DC ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C. Parameters Sym Min Typ Max Units Conditions EAS 18 — — mJ Sym Min Typ Max Units TJ -55 — +150 °C TA -55 — +150 °C Thermal Resistance Junction-to-X, 8L 5x6-PDFN RθJX — — 56 °C/W Note 1 Thermal Resistance Junction-to-Case, 8L 5x6-PDFN RθJC — — 2.0 °C/W Note 2 Thermal Resistance Junction-to-X, 8L 3.3x3.
PAGE 4
MCP87090 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Note: Unless otherwise indicated, TA = +25°C.
PAGE 5
MCP87090 Note: Unless otherwise indicated, TA = +25°C. 1.7 100 IAS - Ava alanche Current (A) VGS(TH)) - Gate-to-Source Thres shold Voltage (V) ID = 250 μA 1.5 1.3 1.1 0.9 0.1 1 10 tAV - Avalanche Time (ms) 100 80 70 10 ID - Drain Current (A) ISD - So ource-to-Drain Current (A) TC = +150°C FIGURE 2-10: Single-Pulse Unclamped Inductive Switching. 100 1 TC = +125°C TC = +25°C 0.1 0.01 60 50 VGS = 10V 40 VGS = 4.5V 30 20 10 0.001 0.0 0.2 0.4 0.6 0.
PAGE 6
MCP87090 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PINOUT DESCRIPTION FOR THE MCP87090 MCP87090 5x6 PDFN, 3.3 x 3.3 PDFN Pin Type Function 1, 2, 3 S Source pin 4 G Gate pin 5, 6, 7, 8 D Drain pin, including exposed thermal pad DS22332A-page 6  2013 Microchip Technology Inc.
PAGE 7
MCP87090 4.0 PACKAGING INFORMATION 4.1 Package Marking Information* 8-Lead PDFN (3.3x3.3x1.0 mm) Example 090U 1232 256 8-Lead PDFN (5x6x1.0 mm) NNN PIN 1 Example 87090 U/MF e ^^3 1232 256 PIN 1 *RoHS compliant using EU-RoHS exemption: 7(a) - Lead in high-melting-temperature-type solders (i.e. lead-based alloys containing 85% by weight or more lead) can be found on the outer packaging for this package. Legend: XX...
PAGE 8
MCP87090 DS22332A-page 8  2013 Microchip Technology Inc.
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MCP87090  2013 Microchip Technology Inc.
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MCP87090 DS22332A-page 10  2013 Microchip Technology Inc.
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MCP87090  2013 Microchip Technology Inc.
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MCP87090 DS22332A-page 12  2013 Microchip Technology Inc.
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MCP87090  2013 Microchip Technology Inc.
PAGE 14
MCP87090 NOTES: DS22332A-page 14  2013 Microchip Technology Inc.
PAGE 15
MCP87090 APPENDIX A: REVISION HISTORY Revision A (January 2013) • Original Release of this Document.  2013 Microchip Technology Inc.
PAGE 16
MCP87090 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Example: a) b) Device: MCP87090T: Temperature Range: U Package: N-Channel power MOSFET (Tape and Reel) MCP87090T-U/LC: Tape and Reel, Ultra-High Temperature, 8LD 3.3x3.
PAGE 17
Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature.
PAGE 18
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