Datasheet

 2012 Microchip Technology Inc. DS22308B-page 5
MCP87050
Note: Unless otherwise indicated, T
A
= +25°C.
FIGURE 2-7: Gate-to-Source Threshold
Voltage vs. Temperature.
FIGURE 2-8: Source-to-Drain Current vs.
Source-to-Drain Voltage.
FIGURE 2-9: Maximum Safe Operating
Area.
FIGURE 2-10: Maximum Drain Current vs.
Temperature.
FIGURE 2-11: Transient Thermal
Impedance.
FIGURE 2-12: Single-Pulse Unclamped
Inductive Switching.
0.7
0.9
1.1
1.3
1.5
1.7
-75 -50 -25 0 25 50 75 100 125 150
175
T
C
- Case Temperature (°C)
I
D
= 250uA
Voltage (V)
V
GS(TH)
- Gate-to-Source Threshold
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8
1.0
V
SD
- Source to Drain Voltage (V)
T
C
= 25°C
T
C
= 125°C
I
SD
- Source-to-Drain Current (A)
V
SD
- Source-to-Drain Voltage (V)
0.01
0.1
1
10
100
1000
0.01 0.1 1 10
100
I
D
- Drain Current (A)
V
DS
- Drain to Source Voltage (V)
DC
1s
100ms
10ms
1ms
Operation in this range is
limited by RDS(on)
R
θJA
= 56 °C/W
Single Pulse
0
20
40
60
80
100
120
0 25 50 75 100 125
150
I
D
- Drain Current (A)
T
C
- Case Temperature (˚C)
V
GS
= 4.5V
V
GS
= 10V
0.001
0.01
0.1
1
0.001 0.1 10 1000
t
1
- Pulse Duration (s)
DC = 0.5
DC = 0.3
DC = 0.1
DC = 0.05
DC = 0.02
DC = 0.01
Single Pulse
Z
JA
- Normalized Thermal
Impedance
1
10
100
0.01 0.1 1 10
100
IAS - Avalanche Current (A)
tAv - Avalanche Time (ms)
TC = 25°C
TC = 150°C