Datasheet
2013 Microchip Technology Inc. DS22329A-page 5
MCP87018
Note: Unless otherwise indicated, T
A
= +25°C.
FIGURE 2-7: Gate-to-Source Threshold
Voltage vs. Temperature.
FIGURE 2-8: Source-to-Drain Current vs.
Source-to-Drain Voltage.
FIGURE 2-9: Maximum Drain Current vs.
Temperature.
FIGURE 2-10: Single-Pulse Unclamped
Inductive Switching.
FIGURE 2-11: Drain-to-Source Breakdown
Voltage vs. Temperature.
1.1
1.3
1.5
1.7
e-to-Source Threshold
Voltage (V)
I
D
= 250 μA
0.7
0.9
-75 -50 -25 0 25 50 75 100 125 150 175
V
GS(TH)
-Ga
t
T
C
- Case Temperature (°C)
0.1
1
10
100
c
e-to-Drain Current (A)
T
C
= +25°C
T
C
= +125°C
0.001
0.01
0.0 0.2 0.4 0.6 0.8 1.0
I
SD
- Sour
c
V
SD
- Source-to-Drain Voltage (V)
0
20
40
60
80
100
120
0 25 50 75 100 125
150
I
D
- Drain Current (A)
T
C
- Case Temperature (˚C)
V
GS
= 4.5V
V
GS
= 10V
10
100
a
lanche Current (A)
T
C
= +25°C
T
C
= +150°C
1
0.01 0.1 1 10 100
I
AS
-Av
a
t
AV
- Avalanche Time (ms)
27
28
29
30
B
reakdown Voltage (V)
I
D
= 250 μA
25
26
-60 -40 -20 0 20 40 60 80 100 120 140 160
V
BR(DSS)
-
B
T
C
- Case Temperature(°C)