Datasheet
MCP87018
DS22329A-page 2 2013 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DS
.......................................................................+25V
V
GS
........................................................... +10.0V / -8V
I
D,
Continuous ................................. 100A, T
C
= +25°C
P
D
.....................................................2.2W, T
A
= +25°C
T
J
, T
STG
..............................................-55°C to +150°C
E
AS
Avalanche Energy.................................. 612.5 mJ
I
D
=35A, L=1mH, R
G
=25Ω
† Notice: Stresses above those listed under
“Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional
operation of the device at those or any other conditions
above those indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
DC ELECTRICAL CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C
Parameters Sym. Min. Typ. Max. Units Conditions
Static Characteristics
Drain-to-Source
Breakdown Voltage
B
VDSS
25 — — V V
GS
= 0V, I
D
= 250 µA
Drain-to-Source Leakage Current I
DSS
—— 1µAV
GS
= 0V, V
DS
= 20V
Gate-to-Source Leakage Current I
GSS
— — 100 nA V
DS
= 0V, V
GS
= 10V/-8V
Gate-to-Source Threshold Voltage V
GS(TH)
11.31.6VV
DS
= V
GS
, I
D
= 250 µA
Drain-to-Source On Resistance R
DS(ON)
—2.2— V
GS
= 3.3V, I
D
= 25 A
—1.82.2m
V
GS
= 4.5V, I
D
= 25 A
—1.51.9m
V
GS
= 10V, I
D
= 25 A
Transconductance g
fs
— 162 — S V
DS
= 12.5V, I
D
= 25A
Dynamic Characteristics
Input Capacitance C
ISS
— 2925 — pF V
GS
= 0V, V
DS
= 12.5V, f = 1 MHz
Output Capacitance C
OSS
— 1305 — pF V
GS
= 0V, V
DS
= 12.5V, f = 1 MHz
Reverse Transfer Capacitance C
RSS
— 330 — pF V
GS
= 0V, V
DS
= 12.5V, f = 1 MHz
Total Gate Charge Q
G
—32.537 nCV
DS
= 12.5V, I
D
= 25 A,
V
GS
= 4.5V
Gate-to-Drain Charge Q
GD
—13—nCV
DS
= 12.5V, I
D
= 25 A
Gate-to-Source Charge Q
GS
—5.3—nCV
DS
= 12.5V, I
D
= 25 A
Gate Charge at V
GS(TH)
Q
G(TH)
—3.8—nCV
DS
= 12.5V, I
D
= 25 A
Output Charge Q
OSS
—26—nCV
DS
= 12.5V, V
GS
= 0
Turn-On Delay Time t
d(on)
—6.53— nsV
DS
= 12.5V, V
GS
= 4.5V,
I
D
= 25A, R
G
= 2
Rise Time t
r
—28.3— nsV
DS
= 12.5V, V
GS
= 4.5V,
I
D
= 25A, R
G
= 2
Turn-Off Delay Time t
d(off)
—26.35— nsV
DS
= 12.5V, V
GS
= 4.5V,
I
D
= 25A, R
G
= 2
Fall Time t
f
—28.05— nsV
DS
= 12.5V, V
GS
= 4.5V,
I
D
= 25A, R
G
= 2
Series Gate Resistance R
G
—1.5—