Datasheet

ManualsBrandsMICROCHIP TECHNOLOGY ManualsFETsMCP87018T-U/MF, MOSFET

 2013 Microchip Technology Inc. DS22329A-page 1

MCP87018

Features:

• Low Drain-to-Source On Resistance (R

DS(ON)

)

• Low Total Gate Charge (Q

) and Gate-to-Drain

Charge (Q

)

• Low Series Gate Resistance (R

)

•Fast Switching

• Capable of Short Dead-Time Operation

• RoHS Compliant

Applications:

• Point-of-Load DC-DC Converters

• High Efficiency Power Management in Servers,

Networking and Automotive Applications

Description:

The MCP87018 is an N-Channel power MOSFET in a

popular PDFN 5 mm x 6 mm package. Advanced

packaging and silicon processing technologies allow

the MCP87018 to achieve a low Q

for a given R

DS(on)

value, resulting in a low Figure of Merit (FOM).

Combined with low R

, the low FOM of the MCP87018

allows high efficiency power conversion with reduced

switching and conduction losses.

Package Type

Product Summary Table: Unless otherwise indicated, T

= +25°C

Parameters Sym. Min. Typ. Max. Units Conditions

Operating Characteristics

Drain-to-Source Breakdown Voltage BV

DSS

25 — — V V

= 0V, I

= 250 µA

Gate-to-Source Threshold Voltage V

GS(TH)

11.31.6 VV

= V

, I

= 250 µA

Drain-to-Source On Resistance R

DS(ON)

—1.82.2 mΩ V

= 4.5V, I

= 25A

—1.51.9 mΩ V

= 10V, I

= 25A

Total Gate Charge Q

— 32.5 37 nC V

= 12.5V, I

= 25A, V

= 4.5V

Gate-to-Drain Charge Q

—13— nCV

= 12.5V, I

= 25A

Series Gate Resistance R

—1.5— Ω —

Thermal Characteristics

Thermal Resistance Junction-to-X R

θJX

——56°C/WNote 1

Thermal Resistance Junction-to-Case R

θJC

——1.4°C/WNote 2

Note 1: R

θJX

is determined with the device surface mounted on a 4-Layer FR4 PCB, with a 1" x 1" mounting pad of

2 oz. copper. This characteristic is dependent on user’s board design.

2: R

θJC

is determined using JEDEC 51-14 Method. This characteristic is determined by design.

PDFN 5 x 6

High-Speed N-Channel Power MOSFET

Summary of content (14 pages)

PAGE 1
MCP87018 High-Speed N-Channel Power MOSFET Features: Description: • Low Drain-to-Source On Resistance (RDS(ON)) • Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) • Low Series Gate Resistance (RG) • Fast Switching • Capable of Short Dead-Time Operation • RoHS Compliant The MCP87018 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package.
PAGE 2
MCP87018 1.0 † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VDS ......................................................
PAGE 3
MCP87018 DC ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C Parameters Sym. Min. Typ. Max. Units Conditions Diode Forward Voltage VFD — 0.8 1 V Reverse Recovery Charge QRR — 47 — nC IS = 25A, di/dt = 300 A/µs trr — 28 — ns IS = 25A, di/dt = 300 A/µs EAS 200 — — mJ ID = 20A, L = 1 mH, RG = 25 Sym. Min. Typ. Max.
PAGE 4
MCP87018 2.0 TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Note: Unless otherwise indicated, TA = +25°C.
PAGE 5
MCP87018 1.7 100 ID = 250 μA IAS - Ava alanche Current (A) VGS(TH) - Gate-to-Source Threshold Voltage (V) Note: Unless otherwise indicated, TA = +25°C. 1.5 1.3 1.1 0.9 1 0.01 0.7 -75 -50 -25 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) 100 10 1 TC = +125°C 0.1 TC = +25°C 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) 0.1 TC = +25°C 1 10 100 tAV - Avalanche Time (ms) FIGURE 2-10: Single-Pulse Unclamped Inductive Switching.
PAGE 6
MCP87018 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE MCP87018 5x6 PDFN Symbol Description 1, 2, 3 S Source pin 4 G Gate pin 5, 6, 7, 8 D Drain pin, including exposed thermal pad DS22329A-page 6  2013 Microchip Technology Inc.
PAGE 7
MCP87018 4.0 PACKAGING INFORMATION 4.1 Package Marking Information* 8-Lead PDFN (5x6x1.0 mm) NNN PIN 1 Example 87018 U/MF e ^^3 1219 256 PIN 1 *RoHS compliant using EU-RoHS exemption: 7(a) – Lead in high-melting-temperature-type solders (i.e., lead-based alloys containing 85% by weight or more lead) can be found on the outer packaging for this package. Legend: XX...
PAGE 8
MCP87018 DS22329A-page 8  2013 Microchip Technology Inc.
PAGE 9
MCP87018  2013 Microchip Technology Inc.
PAGE 10
MCP87018 DS22329A-page 10  2013 Microchip Technology Inc.
PAGE 11
MCP87018 APPENDIX A: REVISION HISTORY Revision A (January 2013) • Original Release of this Document.  2013 Microchip Technology Inc.
PAGE 12
MCP87018 PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X /XX Device Temperature Range Package Device: MCP87018T: Temperature Range: U Package: Examples: a) MCP87018T-U/MF: Tape and Reel, Ultra High Temperature, 8LD PDFN package N-Channel Power MOSFET (Tape and Reel) = -55°C to +150°C (Ultra High) MF = 8-Lead High Power Dual Flatpack, No Lead Package (5x6x1.
PAGE 13
Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature.
PAGE 14
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