Datasheet

 2008-2013 Microchip Technology Inc. DS20002090C-page 7
MCP73871
Charge Transistor ON-Resistance
ON-Resistance R
DSON_
— 200 — m V
DD
= 4.5V, T
J
= 105°C
BAT-to-OUT Pass Transistor ON-Resistance
ON-Resistance R
DS_ON
— 200 — m V
DD
= 4.5V, T
J
= 105°C
Battery Discharge Current
Output Reverse
Leakage Current
I
DISCHARGE
—3040μA Shutdown
(V
BAT
< V
DD
< V
UVLO
)
—3040μA Shutdown (0 < V
DD
< V
BAT
)
—3040μAV
BAT
= Power Out, No Load
— -6 -13 μA Charge Complete
Status Indicators - STAT1 (LBO), STAT2, PG
Sink Current I
SINK
—1635mA
Low Output Voltage V
OL
— 0.4 1 V I
SINK
= 4 mA
Input Leakage Current I
LK
— 0.01 1 μA High Impedance, V
DD
on pin
Low Battery Indicator (LBO)
Low Battery Detection
Threshold
V
LBO
— Disable — V
BAT
> V
IN
, PG = Hi-Z
T
A
= -5°C to +55°C
2.85 3.0 3.15 V
2.95 3.1 3.25 V
3.05 3.2 3.35 V
Low Battery Detection
Hysteresis
V
LBO_HYS
— 150 — mV V
BAT
Low-to-High
PROG1 Input (PROG1)
Charge Impedance
Range
R
PROG
1 — 20 k
PROG3 Input (PROG3)
Termination Impedance
Range
R
PROG
5 — 100 k
PROG2 Input (PROG2)
Input High Voltage Level V
IH
1.8 — — V
Input Low Voltage Level V
IL
— — 0.8 V
Input Leakage Current I
LK
— 0.01 1 μAV
PROG2
= V
DD
Timer Enable (TE)
Input High Voltage Level V
IH
1.8 — — V Note 1
Input Low Voltage Level V
IL
— — 0.8 V Note 1
Input Leakage Current I
LK
— 0.01 1 μAV
TE
= V
DD
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for V
IN
= V
REG
+ 0.3V to 6V, T
A
= -40°C to +85°C.
Typical values are at +25°C, V
IN
= [V
REG
(typical) + 1.0V]
Parameters Sym Min Typ Max Units Conditions
Note 1: The value is ensured by design and not production tested.
2: The maximum available charge current is also limited by the value set at PROG1 input.