Datasheet

MCP73871
DS20002090C-page 8 2008-2013 Microchip Technology Inc.
Chip Enable (CE)
Input High Voltage Level V
IH
1.8 V
Input Low Voltage Level V
IL
0.8 V
Input Leakage Current I
LK
0.01 1 μAV
CE
= V
DD
Input Source Selection (SEL)
Input High Voltage Level V
IH
1.8 V
Input Low Voltage Level V
IL
0.8 V
Input Leakage Current I
LK
0.01 1 μAV
SEL
= V
DD
Thermistor Bias
Thermistor Current
Source
I
THERM
47 50 53 μA2 k < R
THERM
< 50 k
Thermistor Comparator
Upper Trip Threshold V
T1
1.20 1.24 1.26 V V
T1
Low-to-High
Upper Trip Point
Hysteresis
V
T1HYS
-40 mV
Lower Trip Threshold V
T2
0.23 0.25 0.27 V V
T2
High-to-Low
Lower Trip Point
Hysteresis
V
T2HYS
—40mV
Thermal Shutdown
Die Temperature T
SD
150 C
Die Temperature
Hysteresis
T
SDHYS
—10C
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise indicated, all limits apply for V
IN
= V
REG
+ 0.3V to 6V, T
A
= -40°C to +85°C.
Typical values are at +25°C, V
IN
= [V
REG
(typical) + 1.0V]
Parameters Sym Min Typ Max Units Conditions
Note 1: The value is ensured by design and not production tested.
2: The maximum available charge current is also limited by the value set at PROG1 input.