Datasheet

MCP73837/8
DS22071B-page 6 © 2007-2011 Microchip Technology Inc.
Timer Enable (TE
)
Input High Voltage Level V
IH
2—V
Input Low Voltage Level V
IL
——0.8V
Input Leakage Current I
LK
—0.011µAV
TE
= V
DD
Thermistor Bias
Thermistor Current Source I
THERM
47 50 53 µA 2 kΩ < R
THERM
< 50 kΩ
Thermistor Comparator
Upper Trip Threshold V
T1
1.20 1.23 1.26 V V
T1
Low to High
Upper Trip Point Hysteresis V
T1HYS
—-40mV
Lower Trip Threshold V
T2
0.235 0.250 0.265 V V
T2
High to Low
Lower Trip Point Hysteresis V
T2HYS
—40mV
System Test (LDO) Mode
Input High Voltage Level V
IH
——V
DD
- 0.1 V
THERM Input Sink Current I
SINK
3 5.5 20 µA Stand-by or System Test
Mode
Bypass Capacitance C
BAT
1
4.7
——µF
µF
I
OUT
< 250 mA
I
OUT
> 250 mA
Automatic Power Down (SLEEP
Comparator, Direction Control)
Automatic Power Down Entry
Threshold
V
PD
V
BAT
+
10 mV
V
BAT
+
100 mV
V 2.3V < V
BAT
< V
REG
V
DD
Falling
Automatic Power Down Exit Threshold V
PDEXIT
-V
BAT
+
150 mV
V
BAT
+
250 mV
V2.3V < V
BAT
< V
REG
V
DD
Rising
Thermal Shutdown
Die Temperature T
SD
150 °C
Die Temperature Hysteresis T
SDHYS
—10°C
DC CHARACTERISTICS (Continued)
Electrical Specifications: Unless otherwise indicated, all limits apply for V
DD
= [V
REG
(typical) + 0.3V] to 6V,
T
A
= -40°C to +85°C. Typical values are at +25°C, V
DD
= [V
REG
(typical) + 1.0V]
Parameters Sym Min Typ Max Units Conditions
Note 1: The supply voltage (V
DD
) = V
AC
when input power source is from AC-adapter and the supply voltage (V
DD
) = V
USB
when input power source is from USB-port.
2: The value is guaranteed by design and not production tested.
3: The current is based on the ratio of selected current regulation (I
REG
).
4: The maximum charge impedance has to be less than shutdown impedance for normal operation.