Datasheet

MCP73833/4
DS22005B-page 4 © 2009 Microchip Technology Inc.
Preconditioning Current Regulation (Trickle Charge Constant Current Mode)
Precondition Current Ratio I
PREG
/ I
REG
7.5 10 12.5 % PROG = 1.0 kΩ to 10 kΩ
15 20 25 % T
A
=-5°C to +55°C
30 40 50 %
— 100 — %
Precondition Voltage Threshold
Ratio
V
PTH
/ V
REG
64 66.5 70 % V
BAT
Low-to-High
69 71.5 75 %
Precondition Hysteresis V
PHYS
— 100 — mV V
BAT
High-to-Low
Charge Termination
Charge Termination Current Ratio I
TERM
/ I
REG
3.75 5 6.25 % PROG = 1.0 kΩ to 10 kΩ
5.6 7.5 9.4 % T
A
=-5°C to +55°C
7.5 10 12.5 %
15 20 25 %
Automatic Recharge
Recharge Voltage Threshold Ratio V
RTH
/ V
REG
— 94.0 — % V
BAT
High-to-Low
— 96.5 — %
Pass Transistor ON-Resistance
ON-Resistance R
DSON
— 300 — mΩ V
DD
= 3.75V
T
J
= 105°C
Battery Discharge Current
Output Reverse Leakage Current I
DISCHARGE
— 0.15 2 µA PROG Floating
—0.252 µAV
DD
< V
BAT
—0.152 µAV
DD
< V
STOP
— -5.5 -15 µA Charge Complete
Status Indicators - STAT1, STAT2, PG
Sink Current I
SINK
—1525mA
Low Output Voltage V
OL
—0.41 VI
SINK
= 4 mA
Input Leakage Current I
LK
— 0.01 1 µA High Impedance, 6V on pin
PROG Input
Charge Impedance Range R
PROG
1—20kΩ
Standy Impedance R
PROG
70 — 200 kΩ Minimum Impedance for
Standby
Thermistor Bias
Thermistor Current Source I
THERM
47 50 53 µA 2 kΩ < R
THERM
< 50 kΩ
Thermistor Comparator
Upper Trip Threshold V
T1
1.20 1.23 1.26 V V
THERM
Low-to-High
Upper Trip Point Hysteresis V
T1HYS
—-50— mV
Lower Trip Threshold V
T2
0.235 0.25 0.265 V V
THERM
High-to-Low
Lower Trip Point Hysteresis V
T2HYS
—50—mV
System Test (LDO) Mode
Input High Voltage Level V
IH
(V
DD
-0.1)
—— V
THERM Input Sink Current I
SINK
3 6 20 µA Stand-by or system test mode
Bypass Capacitance C
BAT
1——µFI
OUT
< 250 mA
4.7 — — µF I
OUT
> 250 mA
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits apply for V
DD
= [V
REG
(Typical)+0.3V] to 6V, T
A
=-40°C to 85°C.
Typical values are at +25°C, V
DD
= [V
REG
(Typical)+1.0V]
Parameters Sym Min Typ Max Units Conditions