Datasheet

© 2007 Microchip Technology Inc. DS21704B-page 3
MCP73827
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Maximum Ratings*
V
IN
......................................................................-0.3V to 6.0V
All inputs and outputs w.r.t. GND ................-0.3 to (V
IN
+0.3)V
Current at MODE Pin .............................................. +/-30 mA
Current at V
DRV
.......................................................... +/-1 mA
Maximum Junction Temperature, T
J
..............................150°C
Storage temperature .....................................-65°C to +150°C
ESD protection on all pins..................................................≥ 4kV
*Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification
is not implied. Exposure to maximum rating conditions
for extended periods may affect device reliability.
PIN FUNCTION TABLE
DC CHARACTERISTICS: MCP73827-4.1, MCP73827-4.2
Pin Name Description
1 SHDN Logic Shutdown
2 GND Battery Management
0V Reference
3 MODE Charge Status Output
4I
MON
Charge Current Monitor
5V
BAT
Cell Voltage Monitor Input
6V
DRV
Drive Output
7V
SNS
Charge Current Sense Input
8V
IN
Battery Management
Input Supply
Unless otherwise specified, all limits apply for V
IN
= [V
REG
(typ)+1V], R
SENSE
= 500 mΩ, T
A
= -20°C to +85°C.
Typical values are at +25°C. Refer to Figure 1-1 for test circuit.
Parameter Sym Min Typ Max Units Conditions
Supply Voltage V
IN
4.5 — 5.5 V
Supply Current I
IN
—
—
0.5
250
15
560
µA Shutdown, V
SHDN
= 0V
Constant Voltage Mode
Voltage Regulation (Constant Voltage Mode)
Regulated Output Voltage V
REG
4.059
4.158
4.1
4.2
4.141
4.242
V
V
MCP73827-4.1 only
MCP73827-4.2 only
Line Regulation ΔV
BAT
-10 — 10 mV V
IN
= 4.5V to 5.5V,
I
OUT
= 75 mA
Load Regulation ΔV
BAT
-1 +0.1 1 mV I
OUT
=10 mA to 75 mA
Output Reverse Leakage Current I
LK
—8—µAV
IN
=Floating, V
BAT
=V
REG
External MOSFET Gate Drive
Gate Drive Current I
DRV
—
0.08
—
—
1
—
mA
mA
Sink, CV Mode
Source, CV Mode
Gate Drive Minimum Voltage V
DRV
—1.6— V
Current Regulation (Controlled Current Mode)
Current Sense Gain A
CS
— 100 — dB Δ(V
SNS
-V
DRV
) / ΔV
BAT
Current Limit Threshold V
CS
40 53 75 mV (V
IN
-V
SNS
) at I
OUT
Foldback Current Scale Factor K — 0.43 — A/A
Charge Status Indicator - MODE
Threshold Voltage V
TH
—V
REG
—V
Low Output Voltage V
OL
— — 400 mV I
SINK
= 10 mA
Leakage Current I
LK
—— 1 µAI
SINK
=0 mA, V
MODE
=5.5V
Shutdown Input - SHDN
Input High Voltage Level V
IH
40 — — %V
IN
Input Low Voltage Level V
IL
——25%V
IN
Input Leakage Current I
LK
—— 1 µAV
SHDN
=0V to 5.5V
Charge Current Monitor - I
MON
Charge Current Monitor Gain A
IMON
—26—V/VΔV
IMON
/ Δ(V
IN
-V
SNS
)