Datasheet

© 2012 Microchip Technology Inc. DS25124A-page 3
MCP6V11/1U
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Absolute Maximum Ratings †
V
DD
–V
SS
.................................................................................................................................................................6.5V
Current at Input Pins ..............................................................................................................................................±2 mA
Analog Inputs (V
IN
+ and V
IN
–) (Note 1) .....................................................................................V
SS
– 1.0V to V
DD
+1.0V
All other Inputs and Outputs .......................................................................................................V
SS
– 0.3V to V
DD
+0.3V
Difference Input voltage .................................................................................................................................|V
DD
–V
SS
|
Output Short Circuit Current ........................................................................................................................... Continuous
Current at Output and Supply Pins ......................................................................................................................±30 mA
Storage Temperature .............................................................................................................................-65°C to +150°C
Maximum Junction Temperature .......................................................................................................................... +150°C
ESD protection on all pins (HBM, CDM, MM) ........................................................................................... ≥ 2kV,1.5kV,400V
Note 1: See Section 4.2.1, Rail-to-Rail Inputs.
1.2 Specifications
†Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
TABLE 1-1: DC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.6V to +5.5V, V
SS
= GND,
V
CM
= V
DD
/3,V
OUT
=V
DD
/2, V
L
=V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 20 pF (refer to Figure 1-4 and Figure 1-5).
Parameters Sym. Min. Typ. Max. Units Conditions
Input Offset
Input Offset Voltage V
OS
-8 — +8 µV T
A
= +25°C
Input Offset Voltage Drift with
Temperature (Linear Temp. Co.)
TC
1
-50 — +50 nV/°C T
A
= -40 to +125°C
(Note 1)
Input Offset Voltage Quadratic
Te mp. C o .
TC
2
—±0.08 —nV/°C
2
T
A
= -40 to +125°C
Power Supply Rejection PSRR 118 135 — dB
Input Bias Current and Impedance
Input Bias Current I
B
—+5 —pA
Input Bias Current across Temperature I
B
—+17 —pAT
A
= +85°C
I
B
0+2.9+5nAT
A
= +125°C
Input Offset Current I
OS
—±50 —pA
Input Offset Current across Temperature I
OS
—±80 —pAT
A
= +85°C
I
OS
-1 ±0.4 +1 nA T
A
= +125°C
Common Mode Input Impedance Z
CM
—10
13
||6 — Ω||pF
Differential Input Impedance Z
DIFF
—10
13
||6 — Ω||pF
Note 1: For Design Guidance only; not tested.
2: Figure 2-18 shows how V
CML
and V
CMH
changed across temperature for the first production lot.