Datasheet

 2004 Microchip Technology Inc. DS21908A-page 4
MCP6S91/2/3
AC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
= V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
=10kΩ to V
DD
/2, C
L
= 60 pF, SI and SCK are tied low and CS is tied high.
Parameters Sym Min Typ Max Units Conditions
Frequency Response
-3 dB Bandwidth BW — 1 to 18 — MHz All gains; V
OUT
< 100 mV
P-P
(Note 1)
Gain Peaking GPK — 0 — dB All gains; V
OUT
< 100 mV
P-P
Total Harmonic Distortion plus Noise
f = 20 kHz, G = +1 V/V THD+N — 0.0011 — % V
OUT
= 1.5V ± 1.0 V
PK
, V
DD
= 5.0V,
BW = 80 kHz, R
L
= 10 kΩ to 1.5V
f = 20 kHz, G = +1 V/V THD+N — 0.0089 — % V
OUT
= 2.5V ± 1.0 V
PK
, V
DD
= 5.0V,
BW = 80 kHz
f = 20 kHz, G = +4 V/V THD+N — 0.0045 — % V
OUT
= 2.5V ± 1.0 V
PK
, V
DD
= 5.0V,
BW = 80 kHz
f = 20 kHz, G = +16 V/V THD+N — 0.028 — % V
OUT
= 2.5V ± 1.0 V
PK
, V
DD
= 5.0V,
BW = 80 kHz
Step Response
Slew Rate SR — 4.0 — V/µs G = 1, 2
— 11 — V/µs G = 4, 5, 8, 10
— 22 — V/µs G = 16, 32
Noise
Input Noise Voltage E
ni
—4.5—µV
P-P
f = 0.1 Hz to 10 Hz (Note 2)
— 30 — f = 0.1 Hz to 200 kHz (Note 2)
Input Noise Voltage Density e
ni
—10—nV/√Hz f = 10 kHz (Note 2)
Input Noise Current Density i
ni
—4—fA/√Hz f = 10 kHz
Note 1: See Table 4-1 for a list of typical numbers and Figure 2-25 for the frequency response versus gain.
2: E
ni
and e
ni
include ladder resistance noise. See Figure 2-12 for e
ni
versus G data.