Datasheet

 2004 Microchip Technology Inc. DS21908A-page 10
MCP6S91/2/3
2.0 TYPICAL PERFORMANCE CURVES
Note: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
REF
=V
SS
, G = +1 V/V,
Input = CH0 = (0.3V)/G, CH1 = 0.3V, R
L
=10kΩ to V
DD
/2 and C
L
= 60 pF.
FIGURE 2-1: DC Gain Error, G = +1.
FIGURE 2-2: DC Gain Error, G ≥ +2.
FIGURE 2-3: Ladder Resistance Drift.
FIGURE 2-4: DC Gain Drift, G = +1.
FIGURE 2-5: DC Gain Drift, G ≥ +2.
FIGURE 2-6: Crosstalk vs. Frequency
(circuit in Figure 6-4).
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
24%
-0.10 -0.08 -0.06 -0.04 -0.02
0.00 0.02 0.04 0.06 0.08 0.10
DC Gain Error (%)
Percentage of Occurrences
600 Samples
G = +1
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
-0.6 -0.5 -0.4 -0.3 -0.2 -0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6
DC Gain Error (%)
Percentage of Occurrences
600 Samples
G ≥ +2
0%
2%
4%
6%
8%
10%
12%
14%
16%
0.019 0.020 0.021 0.022 0.023 0.024 0.025 0.026 0.027 0.028 0.029 0.030
Ladder Resistance Drift (%/°C)
Percentage of Occurrences
597 Samples
T
A
= -40 to +125°C
0%
5%
10%
15%
20%
25%
30%
35%
-0.0006 -0.0005 -0.0004 -0.0003 -0.0002 -0.0001
0.0000 0.0001 0.0002 0.0003 0.0004 0.0005 0.0006
DC Gain Drift (%/°C)
Percentage of Occurrences
600 Samples
G = +1
T
A
= -40 to +125°C
0%
2%
4%
6%
8%
10%
12%
14%
16%
18%
20%
22%
24%
26%
-0.0020 -0.0016 -0.0012 -0.0008 -0.0004
0.0000 0.0004 0.0008 0.0012 0.0016 0.0020
DC Gain Drift (%/°C)
Percentage of Occurrences
600 Samples
G
≥
+2
T
A
= -40 to +125°C
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
1.E+05 1.E+06 1.E+07 1.E+08
Frequency (Hz)
Crosstalk, Input Referred (dB)
V
DD
= 5.0V
G = +32 V/V
CH0 selected
R
S
= 1 kΩ
R
S
= 0 Ω
R
S
= 100
Ω
R
S
= 10 kΩ
100k 100M10M1M