Datasheet

© 2011 Microchip Technology Inc. DS25073A-page 7
MCP6N11
TABLE 1-3: DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= 25°C, V
DD
= 1.8V to 5.5V, V
SS
= GND, EN/CAL =V
DD
,
V
CM
= V
DD
/2, V
DM
=0V, V
REF
=V
DD
/2, V
L
=V
DD
/2, R
L
=10kΩ to V
L
, C
L
= 60 pF and G
DM
=G
MIN
;
see Figure 1-6 and Figure 1-7.
Parameters Sym Min Typ Max Units G
MIN
Conditions
EN/CAL
Low Specifications
EN/CAL
Logic
Threshold, Low
V
IL
V
SS
—0.2V
DD
Vall
EN/CAL
Input Current,
Low
I
ENL
— -0.1 — nA EN/CAL = 0V
GND Current I
SS
-7 -2.5 — µA EN/CAL = 0V, V
DD
=5.5V
Amplifier Output Leakage
I
O(LEAK)
— 10 — nA EN/CAL = 0V
EN/CAL
High Specifications
EN/CAL
Logic
Threshold, High
V
IH
0.8 V
DD
V
DD
Vall
EN/CAL Input Current,
High
I
ENH
— -0.01 — nA EN/CAL = V
DD
EN/CAL Dynamic Specifications
EN/CAL
Input Hysteresis V
HYST
—
0.2
—
Vall
EN/CAL
Low to Amplifier
Output High-Z Turn-off
Time
t
OFF
— 3 10 µs EN/CAL = 0.2V
DD
to V
OUT
= 0.1(V
DD
/2),
V
DM
G
DM
= 1 V, V
L
=0V
EN/CAL High to
Amplifier Output
On Time
t
ON
12 20 28 ms EN/CAL = 0.8V
DD
to V
OUT
= 0.9(V
DD
/2),
V
DM
G
DM
= 1 V, V
L
=0V
EN/CAL
Low to
EN/CAL
High low time
t
ENLH
100 — — µs Minimum time before externally
releasing EN/CAL
(Note 1)
Amplifier On to
EN/CAL
Low Setup Time
t
ENOL
—100— µs
POR Dynamic Specifications
V
DD
↓ to Output Off t
PHL
—10—µsallV
L
=0V, V
DD
= 1.8V to
V
PRL
–0.1V step,
90% of V
OUT
change
V
DD
↑ to Output On t
PLH
140 250 360 ms
V
L
=0V, V
DD
= 0V to V
PRH
+0.1V step,
90% of V
OUT
change
Note 1: For design guidance only; not tested.
TABLE 1-4: TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, all limits are specified for: V
DD
= 1.8V to 5.5V, V
SS
= GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
A
-40 — +125 °C
Operating Temperature Range T
A
-40 — +125 °C (Note 1)
Storage Temperature Range T
A
-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 8L-SOIC θ
JA
—150—°C/W
Thermal Resistance, 8L-TDFN (2×3) θ
JA
—53—°C/W
Note 1: Operation must not cause T
J
to exceed the Absolute Maximum Junction Temperature specification (+150°C).