Datasheet

MCP6N11
DS25073A-page 6 © 2011 Microchip Technology Inc.
TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
=25°C, V
DD
= 1.8V to 5.5V, V
SS
= GND,
EN/CAL
=V
DD
, V
CM
=V
DD
/2, V
DM
=0V, V
REF
=V
DD
/2, V
L
=V
DD
/2, R
L
=10kΩ to V
L
, C
L
= 60 pF and G
DM
=G
MIN
;
see Figure 1-6 and Figure 1-7.
Parameters Sym Min Typ Max Units G
MIN
Conditions
AC Response
Gain Bandwidth
Product
GBWP — 0.50 G
MIN
— MHz 1 to 10
— 35 — MHz 100
Phase Margin PM — 70 — ° all
Open-Loop Output
Impedance
R
OL
—0.9—kΩ 1 to 10
—0.6—kΩ 100
Power Supply
Rejection Ratio
PSRR — 94 — dB all f < 10 kHz
Common Mode
Rejection Ratio
CMRR — 104 — dB 1 to 10 f < 10 kHz
— 94 — dB 100 f < 10 kHz
Step Response
Slew Rate SR — 3 — V/µs 1 to 10 V
DD
=1.8V
—9—V/µs V
DD
=5.5V
— 2 — V/µs 100 V
DD
=1.8V
—6—V/µs V
DD
=5.5V
Overdrive Recovery,
Input Common Mode
t
IRC
—10—µs allV
CM
=V
SS
–1V (or V
DD
+ 1V) to V
DD
/2,
G
DM
V
DM
= ±0.1V, 90% of V
OUT
change
Overdrive Recovery,
Input Differential
Mode
t
IRD
—5—µs V
DM
=V
DML
–(0.5V)/G
MIN
(or V
DMH
+(0.5V)/G
MIN
) to 0V,
V
REF
=(V
DD
–G
DM
V
DM
)/2,
90% of V
OUT
change
Overdrive Recovery,
Output
t
OR
—8—µs G
DM
=2G
MIN
, G
DM
V
DM
=0.5V
DD
to 0V,
V
REF
=0.75V
DD
(or 0.25V
DD
),
90% of V
OUT
change
Noise
Input Noise Voltage E
ni
— 570/G
MIN
—µV
P-P
1 to 10 f = 0.1 Hz to 10 Hz
—18—µV
P-P
100
Input Noise Voltage
Density
e
ni
— 950/G
MIN
—nV/√Hz 1 to 10 f = 100 kHz
—35—nV/√Hz 100
Input Current Noise
Density
i
ni
—1—fA/√Hz all f = 1 kHz