Datasheet
MCP6H91/2/4
DS25138B-page 4 2012 Microchip Technology Inc.
Output
High-Level Output Voltage V
OH
3.490 3.495 — V V
DD
=3.5V
0.5V input overdrive
4.985 4.993 — V V
DD
=5V
0.5V input overdrive
11.970 11.980 — V V
DD
=12V
0.5V input overdrive
Low-Level Output Voltage V
OL
— 0.005 0.010 V V
DD
=3.5V
0.5 V input overdrive
— 0.007 0.015 V V
DD
=5V
0.5 V input overdrive
— 0.020 0.030 V V
DD
=12V
0.5 V input overdrive
Output Short-Circuit Current I
SC
—±35—mAV
DD
=3.5V
—±41—mAV
DD
=5V
—±41—mAV
DD
=12V
Power Supply
Supply Voltage V
DD
3.5 — 12 V Single-Supply operation
±1.75 — ±6 V Dual-Supply operation
Quiescent Current per Amplifier I
Q
—22.8mAI
O
=0, V
CM
=V
DD
/4
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +3.5V to +12V, V
SS
= GND,
V
CM
=V
DD
/2 - 1.4V, V
OUT
V
DD
/2, V
L
=V
DD
/2, R
L
=10kto V
L
and C
L
= 60 pF. (Refer to Figure 1-1).
Parameters Sym. Min. Typ. Max. Units Conditions
AC Response
Gain Bandwidth Product GBWP — 10 — MHz
Phase Margin PM — 60 — °C G = +1V/V
Slew Rate SR — 10 — V/µs
Noise
Input Noise Voltage E
ni
— 10 — µVp-p f = 0.1 Hz to 10 Hz
Input Noise Voltage Density E
ni
—23—nV/Hz f = 1 kHz
—12—nV/Hz f = 10 kHz
Input Noise Current Density i
ni
—1.9—fA/Hz f = 1 kHz
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V
DD
= +3.5V to +12V, V
SS
= GND, T
A
= +25°C,
V
CM
=V
DD
/2 - 1.4V, V
OUT
V
DD
/2, V
L
=V
DD
/2 and R
L
=10kto V
L
. (Refer to Figure 1-1).
Parameters Sym. Min. Typ. Max. Units Conditions