Datasheet

MCP6G01/1R/1U/2/3/4
DS22004B-page 4 © 2006 Microchip Technology Inc.
DIGITAL ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
A
= 25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, G = +1 V/V, V
IN
= (0.3V)/G,
R
L
= 100 kΩ to V
DD
/2, C
L
= 60 pF, GSEL = V
DD
/2, and CS is tied low.
Parameters Sym Min Typ Max Units Conditions
CS Low Specifications
CS
Logic Threshold, Low V
CSL
0 0.2V
DD
VCS = 0V
CS
Input Current, Low I
CSL
—30—pACS = 0V
CS
High Specifications
CS
Logic Threshold, High V
CSH
0.8V
DD
—V
DD
VCS = V
DD
CS Input Current, High I
CSH
—0.8—µACS = V
DD
= 5.5V
Quiescent Current per Amplifier,
Shutdown Mode (I
DD
)
I
DD_SHDN
120 pA CS = V
DD
, MCP6G03
Quiescent Current per Amplifier,
Shutdown Mode (I
SS
) (Note 3)
I
SS_SHDN
–2.4 µA CS = V
DD
= 1.8V, MCP6G03
I
SS_SHDN
–7.2 µA CS = V
DD
= 5.5V, MCP6G03
CS
Dynamic Specifications
Input Capacitance C
CS
—10—pF
Input Rise/Fall Times t
CSRF
——
2
µs (Note 2)
CS
Low to Amplifier Output High
Turn-on Time
t
CSON
40 µs G = +1 V/V, V
DD
= 1.8V, V
IN
= 0.9V
DD
CS = 0.2V
DD
to V
OUT
= 0.8V
DD
t
CSON
7 µs G = +1 V/V, V
DD
= 5.5V, V
IN
= 0.9V
DD
CS = 0.2V
DD
to V
OUT
= 0.8V
DD
CS High to Amplifier Output High-Z
Turn-off Time
t
CSOFF
30
—µs
G = +1 V/V, V
IN
= V
DD
/2,
CS
= 0.8V
DD
to V
OUT
= 0.1V
DD
/2
Hysteresis V
CSHY
—0.40— VV
DD
= 1.8V
V
CSHY
—0.55— VV
DD
= 5.5V
GSEL Specifications (Note 1)
GSEL Logic Threshold, Low V
GSL
0.15V
DD
0.35V
DD
V Gain changes between 1 and 10,
I
GSEL
= 0
GSEL Logic Threshold, High V
GSH
0.65V
DD
0.85V
DD
V Gain changes between 1 and 50,
I
GSEL
= 0
GSEL Input Current, Low I
GSL
–10 1.5 µA GSEL voltage = 0.3V
DD
GSEL Input Current, High I
GSH
+1.5 +10 µA GSEL voltage = 0.7V
DD
GSEL Dynamic Specifications (Note 1)
Input Capacitance C
GSEL
—8—pF
Input Rise/Fall Times t
GSRF
——
10
µs (Note 2)
Hysteresis V
GSHY
—45—mVV
DD
= 1.8V
V
GSHY
—95—mVV
DD
= 5.5V
GSEL Low to Valid Output Time,
G = +1 to +10 Select
t
GSL1
10
—µs
V
IN
= 150 mV,
GSEL = 0.25V
DD
to V
OUT
= 1.37V
GSEL Middle to Valid Output Time,
G = +10 to +1 Select
t
GSM10
12
—µs
V
IN
= 150 mV,
GSEL = 0.25V
DD
to V
OUT
= 0.28V
GSEL High to Valid Output Time,
G = +1 to +50 Select
t
GSH1
9
—µs
V
IN
= 30 mV,
GSEL = 0.75V
DD
to V
OUT
= 1.35V
GSEL Middle to Valid Output Time,
G = +50 to +1 Select
t
GSM50
8
—µs
V
IN
= 30 mV,
GSEL = 0.75V
DD
to V
OUT
= 0.18V
Note 1: GSEL is a tri-level input pin. The gain is 10 when its voltage is low, 1 when it is at mid-suppy, and 50 when it is high.
2: Not tested in production. Set by design and characterization.
3: I
SS_SHDN
includes the current through the CS pin, R
L
and R
LAD
, and excludes digital switching currents. The block dia-
gram on the from page shows these current paths (through V
SS
).