Datasheet

MCP6G01/1R/1U/2/3/4
DS22004B-page 2 © 2006 Microchip Technology Inc.
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
V
DD
–V
SS
........................................................................7.0V
Current at Analog Input Pin (V
IN
) ......................................±2mA
Analog Input (V
IN
) †† ..................... V
SS
–1.0VtoV
DD
+1.0V
All other Inputs and Outputs........... V
SS
–0.3VtoV
DD
+0.3V
Output Short Circuit Current...................................continuous
Current at Output and Supply Pins ................................ ±30 mA
Storage Temperature.....................................-65°C to +150°C
Junction Temperature.................................................. +150°C
ESD protection on all pins (HBM; MM) ................ ≥ 4 kV; 200V
† Notice: Stresses above those listed under “Absolute
Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational listings of this specification is not
implied. Exposure to maximum rating conditions for extended
periods may affect device reliability.
†† See Section 4.1.4 “Input Voltage and Current Limits”.
DC ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, G = +1 V/V,
V
IN
= (0.3V)/G, R
L
= 100 kΩ to V
DD
/2, GSEL = V
DD
/2, and CS is tied low.
Parameters Sym Min Typ Max Units Conditions
Amplifier Inputs (V
IN
)
Input Offset Voltage V
OS
–4.5 ±1.0 +4.5 mV G = +1
— ±1.0 — mV G = +10, +50
Input Offset Voltage Drift ΔV
OS
/ΔT
A
— ±2 — µV/°C G = +1, T
A
= -40°C to +125°C
Power Supply Rejection Ratio PSRR 65 80 — dB G = +1 (Note 1)
Input Bias Current I
B
—1—pA
Input Bias Current at I
B
—30— pAT
A
= +85°C
Temperature I
B
— 1000 5000 pA T
A
= +125°C
Input Impedance Z
IN
—10
13
||6 — Ω||pF
Amplifier Gain
Nominal Gains G — 1 to 50 — V/V +1, +10 or +50
DC Gain Error G = +1 g
E
–0.3 — +0.3 % V
OUT
≈ 0.3V to V
DD
− 0.3V
G ≥ +10 g
E
–1.0 — +1.0 % V
OUT
≈ 0.3V to V
DD
− 0.3V
DC Gain Drift G = +1 ΔG/ΔT
A
—±1—ppm/°CT
A
= -40°C to +125°C
G ≥ +10 ΔG/ΔT
A
—±4—ppm/°CT
A
= -40°C to +125°C
Ladder Resistance (Note 1)
Ladder Resistance R
LAD
200 350 500 kΩ
Ladder Resistance
across Temperature
ΔR
LAD
/ΔT
A
— –1800 — ppm/°C T
A
= -40°C to +125°C
Amplifier Output
DC Output Non-linearity G = +1 V
ONL
–0.2 — +0.2 % of FSR V
OUT
= 0.3V to V
DD
–0.3V,
V
DD
=1.8V
V
ONL
–0.1 — +0.1 % of FSR V
OUT
= 0.3V to V
DD
–0.3V,
V
DD
=5.5V
DC Output Non-linearity, G = +10, +50 V
ONL
–0.05 — +0.05 % of FSR V
OUT
= 0.3V to V
DD
–0.3V
Maximum Output Voltage Swing V
OH
, V
OL
V
SS
+10 — V
DD
–10 mV G = +1; 0.3V output overdrive
V
OH
, V
OL
V
SS
+10 — V
DD
–10 mV G ≥ +10; 0.5V output overdrive
Short Circuit Current I
SC
—±7— mAV
DD
= 1.8V
I
SC
—±20— mAV
DD
= 5.5V
Note 1: R
LAD
(R
F
+R
G
in Figure 4-1) connects V
SS
, V
OUT
, and the inverting input of the internal amplifier. Thus, V
SS
is coupled
to the internal amplifier and the PSRR spec describes PSRR+ only. It is recommended that the V
SS
pin be tied directly
to ground to avoid noise problems.
2: I
Q
includes current in R
LAD
(typically 0.6 µA at V
OUT
= 0.3V), and excludes digital switching currents.