Datasheet

© 2006 Microchip Technology Inc. DS22004B-page 13
MCP6G01/1R/1U/2/3/4
Note: Unless otherwise indicated, T
A
=+25°C, V
DD
= +1.8V to +5.5V, V
SS
= GND, G = +1 V/V, V
IN
= (0.3V)/G,
R
L
=100kΩ to V
DD
/2, C
L
= 60 pF, GSEL = V
DD
/2, and CS is tied low.
FIGURE 2-25: Slew Rate vs. Temperature,
with G = +1.
FIGURE 2-26: Slew Rate vs. Temperature,
with G = +10.
FIGURE 2-27: Bandwidth vs. Resistive
Load.
FIGURE 2-28: Output Voltage Swing vs.
Frequency.
FIGURE 2-29: Slew Rate vs. Temperature,
with G = +50.
FIGURE 2-30: Bandwidth vs. Capacitive
Load.
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-50 -25 0 25 50 75 100 125
Ambient Temperature (°C)
Slew Rate (V/µs)
G = +1 V/V
Falling Edge
Rising Edge
V
DD
= 1.8V
V
DD
= 5.5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
Ambient Temperature (°C)
Slew Rate (V/µs)
G = +10 V/V
Falling Edge
Rising Edge
V
DD
= 5.5V
1.E+04
1.E+05
1.E+06
1.E+02 1.E+03 1.E+04 1.E+05
Resistive Load (ȍ)
Bandwidth (Hz)
G = +1
G = +10
G = +50
10k
1M
100k
10k 100k100
1k
0.1
1
10
1.E+03 1.E+04 1.E+05 1.E+06
Frequency (Hz)
Output Voltage Swing (V
P-P
)
V
DD
= 1.8V
V
DD
= 5.5V
G = +1
G = +10
G = +50
1k 100k 1M10k
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-50 -25 0 25 50 75 100 125
Ambient Temperature (°C)
Slew Rate (V/µs)
G = +50 V/V
Falling Edge
Rising Edge
V
DD
= 5.5V
1.E+05
1.E+06
10 100 1000
Capacitive Load (pF)
Bandwidth (Hz)
100k
1M
G = +10
G = +50
G = +1