Datasheet

MCP65R41/6
DS22269B-page 8  2010-2011 Microchip Technology Inc.
Note: Unless otherwise indicated, V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= +25°C, V
IN
+ = V
DD
/2, V
IN
– = GND,
R
L
= 100 k to V
DD
/2 (MCP65R41 only), R
Pull-Up
= 2.74 k to V
DD
/2 (MCP65R46 only) and C
L
= 50 pF.
FIGURE 2-7: Input Hysteresis Voltage
at -40°C.
FIGURE 2-8: Input Hysteresis Voltage
at +25°C.
FIGURE 2-9: Input Hysteresis Voltage
at +125°C.
FIGURE 2-10: Input Hysteresis Voltage
Drift – Linear Temperature Compensation (TC1).
FIGURE 2-11: Input Hysteresis Voltage
Drift – Quadratic Temperature Compensation
(TC2).
FIGURE 2-12: Input Hysteresis Voltage
vs. Temperature.
0%
5%
10%
15%
20%
25%
30%
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
HYST
(mV)
Occurrences (%)
V
DD
= 1.8V
Avg. = 2.4 mV
StDev = 0.17 mV
850 units
V
DD
= 5.5V
Avg. = 2.3 mV
StDev = 0.17 mV
850 units
T
A
= -40°C
0%
5%
10%
15%
20%
25%
30%
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
HYST
(mV)
Occurrences (%)
V
DD
= 1.8V
Avg. = 3.0 mV
StDev = 0.17 mV
850 units
V
DD
= 5.5V
Avg. = 2.8 mV
StDev = 0.17 mV
850 units
T
A
= +25°C
0%
5%
10%
15%
20%
25%
30%
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
HYST
(mV)
Occurrences (%)
V
DD
= 1.8V
Avg. = 3.4 mV
StDev = 0.14 mV
850 units
V
DD
= 5.5V
Avg. = 3.2 mV
StDev = 0.13 mV
850 units
T
A
= +125°C
0%
10%
20%
30%
40%
50%
60%
70%
80%
0 2 4 6 8 101214161820
V
HYST
Drift, TC1 (µV/°C)
Occurrences (%)
850 Units
T
A
= -40°C to +125°C
V
CM
= V
SS
V
DD
= 5.5V
Avg. = 5.7 µV/°C
StDev = 0.50 µV/°C
V
DD
= 1.8V
Avg. = 6.1 µV/°C
StDev = 0.55 µV/°C
0%
10%
20%
30%
-0.50 -0.25 0.00 0.25 0.50 0.75 1.00
V
HYST
Drift, TC2 (µV/°C
2
)
Occurrences (%)
V
DD
= 5.5V
V
CM
= V
SS
Avg. = 10.4 µV/°C
StDev = 0.6 µV/°C
V
DD
= 5.5V
Avg. = 0.25 µV/°C
2
StDev = 0.1 µV/°C
2
V
DD
= 1.8V
Avg. = 0.3 µV/°C
2
StDev = 0.2 µV/°C
2
1380 Units
T
A
= -40°C to +125°C
V
CM
= V
SS
1.0
2.0
3.0
4.0
5.0
-50 -25 0 25 50 75 100 125
Temperature
(°C)
V
HYST
(mV)
V
DD
= 5.5V
V
DD
= 1.8V
V
CM
= V
SS