Datasheet
2009-2013 Microchip Technology Inc. DS22143D-page 3
MCP6566/6R/6U/7/9
1.0 ELECTRICAL
CHARACTERISTICS
1.1 Maximum Ratings †
V
DD
- V
SS
....................................................................... 6.5V
Open-Drain Output.............................................V
SS
+ 10.5V
All other inputs and outputs...........V
SS
– 0.3V to V
DD
+ 0.3V
Analog Input (V
IN
) †† .....................V
SS
- 1.0V to V
DD
+ 1.0V
Difference Input voltage ......................................|V
DD
- V
SS
|
Output Short Circuit Current ....................................±25 mA
Current at Input Pins .................................................. ±2 mA
Current at Output and Supply Pins ..........................±50 mA
Storage temperature ................................... -65°C to +150°C
Ambient temp. with power applied..............-40°C to +125°C
Junction temp............................................................ +150°C
ESD protection on all pins (HBM/MM)4 kV/300V
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to maximum rating conditions for extended periods may
affect device reliability.
†† See Section 4.1.2 “Input Voltage and Current Limits”
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated: V
DD
= +1.8V to +5.5V, V
SS
= GND, T
A
= +25°C, V
IN
+ = V
DD
/2, V
IN
- = V
SS
,
and R
Pull-Up
= 20 k to V
PU
= V
DD
(see Figure 1-1).
Parameters Symbol Min Typ Max Units Conditions
Power Supply
Supply Voltage V
DD
1.8 — 5.5 V
Quiescent Current per comparator I
Q
60 100 130 µA I
OUT
= 0
Power Supply Rejection Ratio PSRR 63 70 — dB V
CM
= V
SS
Input
Input Offset Voltage V
OS
-10 3+10mVV
CM
= V
SS
(Note 1)
Input Offset Drift V
OS
/T— 2—µV/°CV
CM
= V
SS
Input Offset Current I
OS
— 1— pAV
CM
= V
SS
Input Bias Current I
B
—1 —pAT
A
= +25°C, V
IN
- = V
DD
/2
—60 — pAT
A
= +85°C, V
IN
- = V
DD
/2
— 1500 5000 pA T
A
= +125°C, V
IN
- = V
DD
/2
Input Hysteresis Voltage V
HYST
1.0 — 5.0 mV V
CM
= V
SS
(Notes 1, 2)
Input Hysteresis Linear Temp. Co. TC
1
—10 —µV/°C
Input Hysteresis Quadratic Temp. Co. TC
2
—0.3 —µV/°C
2
Common-Mode Input Voltage Range V
CMR
V
SS
0.2 — V
DD
+0.2 V V
DD
= 1.8V
V
SS
0.3 — V
DD
+0.3 V V
DD
= 5.5V
Common-Mode Rejection Ratio CMRR 54 66 — dB V
CM
= -0.3V to V
DD
+0.3V, V
DD
= 5.5V
50 63 — dB V
CM
= V
DD
/2 to V
DD
+0.3V, V
DD
= 5.5V
54 65 — dB V
CM
= -0.3V to V
DD
/2, V
DD
= 5.5V
Common Mode Input Impedance Z
CM
—10
13
||4 — ||pF
Differential Input Impedance Z
DIFF
—10
13
||2 — ||pF
Note 1: The input offset voltage is the center of the input-referred trip points. The input hysteresis is the difference between the
input-referred trip points.
2: V
HYST
at different temperatures is estimated using V
HYST
(T
A
) = V
HYST @ +25°C
+ (T
A
- 25°C) TC
1
+ (T
A
- 25°C)
2
TC
2
.
3: Limit the output current to Absolute Maximum Rating of 50 mA.
4: The pull-up voltage for the open drain output V
PULL_UP
can be as high as the absolute maximum rating of 10.5V. In this
case, I
OH_leak
can be higher than 1 µA (see Figure 2-30).