Datasheet

MCP651/1S/2/3/4/5/9
DS22146C-page 4  2009-2011 Microchip Technology Inc.
Calibration Input
Calibration Input Voltage Range V
CALRNG
V
SS
+0.1 — V
DD
–1.4 mV V
CAL
pin externally driven
Internal Calibration Voltage V
CAL
0.31V
DD
0.33V
DD
0.35V
DD
V
CAL
pin open
Input Impedance Z
CAL
—100||5—k||pF
Power Supply
Supply Voltage V
DD
2.5 — 5.5 V
Quiescent Current per Amplifier I
Q
369mAI
O
= 0
POR Input Threshold, Low V
PRL
1.15 1.40 —
V
POR Input Threshold, High V
PRH
— 1.40 1.65
V
TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= 25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
 V
DD
/2, V
L
= V
DD
/2, R
L
= 1 k to V
L
, C
L
= 20 pF and CAL/CS =V
SS
(refer to Figure 1-2).
Parameters Sym Min Typ Max Units Conditions
AC Response
Gain Bandwidth Product GBWP — 50 — MHz
Phase Margin PM — 65 — ° G = +1
Open-Loop Output Impedance R
OUT
—20— 
AC Distortion
Total Harmonic Distortion plus Noise THD+N — 0.0012 — % G = +1, V
OUT
= 4V
P-P
, f = 1 kHz,
V
DD
= 5.5V, BW = 80 kHz
Step Response
Rise Time, 10% to 90% t
r
—6—nsG = +1, V
OUT
= 100 mV
P-P
Slew Rate SR — 30 — V/µs G = +1
Noise
Input Noise Voltage E
ni
—17—µV
P-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—7.5—nV/Hz f = 1 MHz
Input Noise Current Density i
ni
4—fA/Hz f = 1 kHz
TABLE 1-1: DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/3,
V
OUT
 V
DD
/2, V
L
= V
DD
/2, R
L
= 1 k to V
L
and CAL/CS =V
SS
(refer to Figure 1-2).
Parameters Sym Min Typ Max Units Conditions
Note 1: Describes the offset (under the specified conditions) right after power-up, or just after the CAL/CS pin is toggled. Thus,
1/f noise effects (an apparent wander in V
OS
; see Figure 2-35) are not included.
2: See Figure 2-6 and Figure 2-7 for temperature effects.
3: The I
SC
specifications are for design guidance only; they are not tested.