Datasheet

MCP6481/2/4
DS20002322C-page 4  2012-2013 Microchip Technology Inc.
Output
High-Level Output Voltage V
OH
2.180 2.196 — V V
DD
=2.2V
0.5V input overdrive
5.480 5.493 — V V
DD
=5.5V
0.5V input overdrive
Low-Level Output Voltage V
OL
— 0.004 0.020 V V
DD
=2.2V
0.5 V input overdrive
— 0.007 0.020 V V
DD
=5.5V
0.5 V input overdrive
Output Short-Circuit Current I
SC
—±12—mAV
DD
=2.2V
—±36—mAV
DD
=5.5V
Power Supply
Supply Voltage V
DD
2.2 — 5.5 V
Quiescent Current per Amplifier I
Q
100 240 400 µA I
O
=0, V
CM
=V
DD
/4
TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.2V to +5.5V, V
SS
= GND,
V
CM
=V
DD
/2, V
OUT
 V
DD
/2, V
L
=V
DD
/2, R
L
=10kto V
L
and C
L
= 20 pF. (Refer to Figure 1-1).
Parameters Sym. Min. Typ. Max. Units Conditions
AC Response
Gain Bandwidth Product GBWP — 4 — MHz
Phase Margin PM — 60 — ° G = +1V/V
Slew Rate SR — 2.7 — V/µs
Noise
Input Noise Voltage E
ni
— 7 — µVp-p f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—23—nV/Hz f = 1 kHz
—18—nV/Hz f = 10 kHz
Input Noise Current Density i
ni
—0.6—fA/Hz f = 1 kHz
TABLE 1-1: DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V
DD
= +2.2V to +5.5V, V
SS
= GND, T
A
= +25°C,
V
CM
=V
DD
/2, V
OUT
 V
DD
/2, V
L
=V
DD
/2 and R
L
=10kto V
L
. (Refer to Figure 1-1).
Parameters Sym. Min. Typ. Max. Units Conditions
TABLE 1-3: TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, V
DD
= +2.2V to +5.5V and V
SS
= GND.
Parameters Sym. Min. Typ. Max. Units Conditions
Temperature Ranges
Operating Temperature Range T
A
-40 — +125 °C Note 1
Storage Temperature Range T
A
-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SC-70 
JA
— 331 — °C/W
Thermal Resistance, 5L-SOT-23 
JA
— 256 — °C/W
Thermal Resistance, 8L-2x3 TDFN 
JA
—52.5—°C/W
Thermal Resistance, 8L-MSOP 
JA
—211—°C/W
Thermal Resistance, 8L-SOIC 
JA
—149.5—°C/W
Thermal Resistance, 14L-SOIC 
JA
—95.3—°C/W
Thermal Resistance, 14L-TSSOP 
JA
— 100 — °C/W
Note 1: The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.