Datasheet

 2012-2013 Microchip Technology Inc. DS20002322C-page 11
MCP6481/2/4
Note: Unless otherwise indicated, T
A
=+25°C, V
DD
= +2.2V to +5.5V, V
SS
= GND, V
CM
=V
DD
/2, V
OUT
 V
DD
/2,
V
L
=V
DD
/2, R
L
=10kto V
L
and C
L
=20pF.
FIGURE 2-25: Output Voltage Headroom
vs. Ambient Temperature.
FIGURE 2-26: Output Voltage Headroom
vs. Ambient Temperature.
FIGURE 2-27: Slew Rate vs. Ambient
Temperature.
FIGURE 2-28: Small Signal Non-Inverting
Pulse Response.
FIGURE 2-29: Small Signal Inverting Pulse
Response.
FIGURE 2-30: Large Signal Non-Inverting
Pulse Response.
3
4
5
6
7
Voltage Headroom (mV)
V
DD
-V
OH
V
OL
-V
SS
0
1
2
-50 -25 0 25 50 75 100 125
Output
Temperature (°C)
V
DD
= 2.2V
3
4
5
6
7
8
9
10
Voltage Headroom (mV)
V
DD
-V
OH
V
OL
-V
SS
0
1
2
3
-50 -25 0 25 50 75 100 125
Output
Temperature (°C)
V
DD
= 5.5V
15
2.0
2.5
3.0
3.5
4.0
4.5
S
lew Rate (V/µs)
Falling Edge, V
DD
= 5.5V
Rising Edge, V
DD
= 5.5V
0.0
0.5
1.0
1
.
5
-50 -25 0 25 50 75 100 125
S
Temperature (°C)
Falling Edge,
V
DD
= 2.2
V
Rising Edge, V
DD
= 2.2V
Voltage (10 mV/div)
V
5V
Output
Time (0.5 µs/div)
V
DD
=
5V
G = +1 V/V
Voltage (10 mV/div)
V
DD
= 5 V
G = -1 V/V
Output
Time (0.5 µs/div)
2.0
2.5
3.0
3.5
4.0
4.5
5.0
t
put Voltage (V)
0.0
0.5
1.0
1.5
Ou
t
Time (2 µs/div)
V
DD
= 5 V
G = +1 V/V