Datasheet

MCP6401/1R/1U/2/4/6/7/9
DS22229D-page 8 © 2009-2011 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
1.4 Test Circuits
The circuit used for most DC and AC tests is shown in
Figure 1-1. This circuit can independently set V
CM
and
V
OUT
; see Equation 1-1. Note that V
CM
is not the
circuit’s Common Mode voltage ((V
P
+V
M
)/2), and that
V
OST
includes V
OS
plus the effects (on the input offset
error, V
OST
) of temperature, CMRR, PSRR and A
OL
.
EQUATION 1-1:
FIGURE 1-1: AC and DC Test Circuit for
Most Specifications.
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to +6.0V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 60 pF (Refer to Figure 1-1).
Parameters Sym Min Typ Max Units Part Conditions
AC Response
Gain Bandwidth Product GBWP — 1 — MHz E, H
Phase Margin PM — 65 — ° E, H G = +1 V/V
Slew Rate SR — 0.5 — V/µs E, H
Noise
Input Noise Voltage E
ni
— 3.6 — µVp-p E, H f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—28—nV/√Hz E, H f = 1 kHz
Input Noise Current Density i
ni
—0.6—fA/√Hz E, H f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +6.0V and V
SS
= GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Temperature Range T
A
-40 — +125 °C E temp parts (Note 1)
T
A
-40 — +150 °C H temp parts (Note 1)
Storage Temperature Range T
A
-65 — +155 °C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23 θ
JA
—220.7—°C/W
Thermal Resistance, 8L-SOIC θ
JA
—149.5—°C/W
Thermal Resistance, 14L-SOIC θ
JA
— 95.3 — °C/W
Note 1: The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +155°C.
G
DM
R
F
R
G
⁄ =
V
CM
V
P
V
DD
2 ⁄ +()2 ⁄ =
V
OUT
V
DD
2 ⁄ ()V
P
V
M
–()V
OST
1G
DM
+()++=
Where:
G
DM
= Differential Mode Gain (V/V)
V
CM
= Op Amp’s Common Mode
Input Voltage
(V)
V
OST
= Op Amp’s Total Input Offset
Voltage
(mV)
V
OST
V
IN–
V
IN+
–=
V
DD
R
G
R
F
V
OUT
V
M
C
B2
C
L
R
L
V
L
C
B1
100 kΩ
100 kΩ
R
G
R
F
V
DD
/2
V
P
100 kΩ
100 kΩ
60 pF
100 kΩ
1µF100 nF
V
IN–
V
IN+
C
F
6.8 pF
C
F
6.8 pF
MCP640x