Datasheet

© 2009-2011 Microchip Technology Inc. DS22229D-page 5
MCP6401/1R/1U/2/4/6/7/9
Output Short-Circuit
Current
I
SC
—±5 —mA E, HV
DD
= 1.8V
—±15 —mA E, HV
DD
= 6.0V
Power Supply
Supply Voltage V
DD
1.8 — 6.0 V E, H
Quiescent Current
per Amplifier
I
Q
20 45 70 µA E, H I
O
= 0, V
DD
= 5.0V
V
CM
= 0.2V
DD
— 55 — µA +125°C E
— 60 — µA +150°C H
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8v to +6.0v, V
SS
=GND,
V
CM
=V
DD
/2, V
OUT
≈ V
DD
/2, V
L
=V
DD
D/2 and R
L
= 100 kΩ to V
L
(Refer to Figure 1-1).
Parameters Sym Min Typ Max Units Temp
Parts
(Note 1)
Conditions
Note 1: E part stands for the one whose operating temperature range is from -40°C to +125°C and H part stands
for the one whose operating temperature range is from -40°C to +150°C.
2: Figure 2-14 shows how V
CMR
changes across temperature.
AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to +6.0V, V
SS
= GND, V
CM
=V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
=V
DD
/2, R
L
= 100 kΩ to V
L
and C
L
= 60 pF (Refer to Figure 1-1).
Parameters Sym Min Typ Max Units Parts Conditions
AC Response
Gain Bandwidth Product GBWP — 1 — MHz E, H
Phase Margin PM — 65 — ° E, H G = +1 V/V
Slew Rate SR — 0.5 — V/µs E, H
Noise
Input Noise Voltage E
ni
— 3.6 — µVp-p E, H f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—28—nV/√Hz E, H f = 1 kHz
Input Noise Current Density i
ni
—0.6—fA/√Hz E, H f = 1 kHz
TEMPERATURE SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +6.0V and V
SS
= GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Temperature Range T
A
-40 — +125 °C E temp parts (Note 1)
T
A
-40 — +150 °C H temp parts (Note 1)
Storage Temperature Range T
A
-65 — +155 °C
Thermal Package Resistances
Thermal Resistance, 5L-SC70 θ
JA
—331—°C/W
Thermal Resistance, 5L-SOT-23 θ
JA
— 220.7 — °C/W
Thermal Resistance, 8L-SOIC θ
JA
— 149.5 — °C/W
Thermal Resistance, 8L-2x3 TDFN θ
JA
—52.5—°C/W
Thermal Resistance, 14L-SOIC θ
JA
—95.3—°C/W
Thermal Resistance, 14L-TSSOP θ
JA
—100—°C/W
Note 1: The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +155°C.