Datasheet

MCP631/2/3/4/5/9
DS22197B-page 4  2009-2011 Microchip Technology Inc.
TABLE 1-2: AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
=+25°C, V
DD
= +2.5V to +5.5V, V
SS
=GND, V
CM
=V
DD
/2,
V
OUT
 V
DD
/2, V
L
= V
DD
/2, R
L
= 2 k to V
L
, C
L
= 50 pF and CS =V
SS
(refer to Figure 1-2).
Parameters Sym Min Typ Max Units Conditions
AC Response
Gain Bandwidth Product GBWP — 24 — MHz
Phase Margin PM — 65 — ° G = +1
Open Loop Output Impedance R
OUT
—20— 
AC Distortion
Total Harmonic Distortion plus Noise THD+N — 0.0015 — % G = +1, V
OUT
= 2V
P-P
, f = 1 kHz,
V
DD
= 5.5V, BW = 80 kHz
Step Response
Rise Time, 10% to 90% t
r
— 20 — ns G = +1, V
OUT
= 100 mV
P-P
Slew Rate SR — 10 — V/µs G = +1
Noise
Input Noise Voltage E
ni
—16—µV
P-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—10—nV/Hz f = 1 MHz
Input Noise Current Density i
ni
4—fA/Hz f = 1 kHz
TABLE 1-3: DIGITAL ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2, V
OUT
 V
DD
/
2, V
L
= V
DD
/2, R
L
= 2 k to V
L
, C
L
= 50 pF and CS =V
SS
(refer to Figure 1-1 and Figure 1-2).
Parameters Sym Min Typ Max Units Conditions
CS Low Specifications
CS
Logic Threshold, Low V
IL
V
SS
—0.2V
DD
V
CS
Input Current, Low I
CSL
—0.1—nACS = 0V
CS
High Specifications
CS
Logic Threshold, High V
IH
0.8V
DD
V
DD
V
CS
Input Current, High I
CSH
—0.7—µACS = V
DD
GND Current I
SS
-2 -1
—µA
CS
Internal Pull-Down Resistor R
PD
—5—M
Amplifier Output Leakage I
O(LEAK)
—50—nACS = V
DD
, T
A
= +125°C
CS
Dynamic Specifications
CS
Input Hysteresis V
HYST
—
0.25
—
V
CS
High to Amplifier Off Time
(output goes High-Z)
t
OFF
— 200 — ns G = +1 V/V, V
L
= V
SS
CS = 0.8V
DD
to V
OUT
= 0.1(V
DD
/2)
CS
Low to Amplifier On Time t
ON
—210µs
G = +1 V/V, V
L
= V
SS
,
CS
= 0.2V
DD
to V
OUT
= 0.9(V
DD
/2)