Datasheet

MCP6281/1R/2/3/4/5
DS21811E-page 4 © 2008 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
1.1 Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-2. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “Supply Bypass”.
FIGURE 1-2: AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
FIGURE 1-3: AC and DC Test Circuit for
Most Inverting Gain Conditions.
Electrical Characteristics: Unless otherwise indicated, V
DD
= +2.2V to +5.5V and V
SS
= GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Temperature Range T
A
-40 — +125 °C Note
Storage Temperature Range T
A
-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23 θ
JA
— 256 — °C/W
Thermal Resistance, 6L-SOT-23 θ
JA
— 230 — °C/W
Thermal Resistance, 8L-PDIP θ
JA
—85—°C/W
Thermal Resistance, 8L-SOIC θ
JA
— 163 — °C/W
Thermal Resistance, 8L-MSOP θ
JA
— 206 — °C/W
Thermal Resistance, 14L-PDIP
θ
JA
—
70
—
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
—
120
—
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
—
100
—
°C/W
Note: The Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
V
DD
MCP628X
R
G
R
F
R
N
V
OUT
V
IN
V
DD
/2
1µF
C
L
R
L
V
L
0.1 µF
V
DD
MCP628X
R
G
R
F
R
N
V
OUT
V
DD
/2
V
IN
1µF
C
L
R
L
V
L
0.1 µF