Datasheet

Table Of Contents
MCP6271/1R/2/3/4/5
DS21810F-page 4 © 2008 Microchip Technology Inc.
TEMPERATURE SPECIFICATIONS
MCP6273/MCP6275 CHIP SELECT SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, V
DD
= +2.0V to +5.5V and V
SS
=GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Specified Temperature Range T
A
–40 +125 °C
Operating Temperature Range T
A
–40 +125 °C Note
Storage Temperature Range T
A
–65 +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23 θ
JA
—256°C/W
Thermal Resistance, 6L-SOT-23 θ
JA
—230°C/W
Thermal Resistance, 8L-PDIP θ
JA
—85°C/W
Thermal Resistance, 8L-SOIC θ
JA
—163°C/W
Thermal Resistance, 8L-MSOP θ
JA
—206°C/W
Thermal Resistance, 14L-PDIP
θ
JA
70
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
120
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
100
°C/W
Note: The Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.0V to +5.5V, V
SS
=GND,
V
CM
=V
DD
/2, V
OUT
V
DD
/2, V
L
= V
DD
/2, R
L
=10kΩ to V
DD
/2, C
L
= 60 pF and CS is tied low.
Parameters Sym Min Typ Max Units Conditions
CS
Low Specifications
CS
Logic Threshold, Low V
IL
V
SS
—0.2V
DD
V
CS
Input Current, Low I
CSL
—0.01— µACS = V
SS
CS High Specifications
CS
Logic Threshold, High V
IH
0.8V
DD
—V
DD
V
CS
Input Current, High I
CSH
—0.7 2 µACS = V
DD
GND Current per Amplifier I
SS
–0.7 µA CS = V
DD
Amplifier Output Leakage 0.01 µA CS = V
DD
Dynamic Specifications (Note 1)
CS
Low to Valid Amplifier
Output, Turn on Time
t
ON
—410µsCS Low 0.2 V
DD
, G = +1 V/V,
V
IN
= V
DD
/2, V
OUT
= 0.9 V
DD
/2,
V
DD
= 5.0V
CS
High to Amplifier Output
High-Z
t
OFF
—0.01— µsCS High 0.8 V
DD
, G = +1 V/V,
V
IN
= V
DD
/2, V
OUT
= 0.1 V
DD
/2
Hysteresis V
HYST
—0.6— VV
DD
= 5V
Note 1: The input condition (V
IN
) specified applies to both op amp A and B of the MCP6275. The dynamic
specification is tested at the output of op amp B (V
OUTB
).