Datasheet

MCP6231/1R/1U/2/4
DS21881E-page 4 © 2009 Microchip Technology Inc.
AC ELECTRICAL CHARACTERISTICS
TEMPERATURE CHARACTERISTICS
1.1 Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-1 and Figure 1-1. The bypass
capacitors are laid out according to the rules discussed
in Section 4.6 “PCB Surface Leakage”.
FIGURE 1-1: AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
FIGURE 1-2: AC and DC Test Circuit for
Most Inverting Gain Conditions.
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to 5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, R
L
= 100 kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters Sym Min Typ Max Units Conditions
AC Response
Gain Bandwidth Product GBWP — 300 — kHz
Phase Margin PM — 65 — ° G = +1 V/V
Slew Rate SR — 0.15 — V/µs
Noise
Input Noise Voltage E
ni
—6.0—µV
P-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—52—nV/√Hz f = 1 kHz
Input Noise Current Density i
ni
—0.6—fA/√Hz f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +5.5V and V
SS
= GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Extended Temperature Range T
A
-40 — +125 °C
Operating Temperature Range T
A
-40 — +125 °C Note
Storage Temperature Range T
A
-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SC70
θ
JA
—
331
—
°C/W
Thermal Resistance, 5L-SOT-23
θ
JA
—
256
—
°C/W
Thermal Resistance, 8L-DFN θ
JA
— 84.5 — °C/W
Thermal Resistance, 8L-MSOP θ
JA
—206—°C/W
Thermal Resistance, 8L-TDFN θ
JA
—41—°C/W
Thermal Resistance, 8L-PDIP θ
JA
—85—°C/W
Thermal Resistance, 8L-SOIC θ
JA
—163—°C/W
Thermal Resistance, 14L-PDIP θ
JA
—70—°C/W
Thermal Resistance, 14L-SOIC θ
JA
—120—°C/W
Thermal Resistance, 14L-TSSOP θ
JA
—100—°C/W
Note: The internal Junction Temperature (T
J
) must not exceed the Absolute Maximum specification of +150°C.
V
DD
MCP623X
R
G
R
F
R
N
V
OUT
V
IN
V
DD
/2
1µF
C
L
R
L
V
L
0.1 µF
V
DD
MCP623X
R
G
R
F
R
N
V
OUT
V
DD
/2
V
IN
1µF
C
L
R
L
V
L
0.1 µF