Datasheet

Table Of Contents
MCP616/7/8/9
DS21613C-page 4 © 2008 Microchip Technology Inc.
AC ELECTRICAL CHARACTERISTICS
MCP618 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
FIGURE 1-1: Timing Diagram for the CS
Pin on the MCP618.
Electrical Specifications: Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
=GND, T
A
= 25°C, V
CM
=V
DD
/2, V
OUT
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
=60pF.
Parameters Sym Min Typ Max Units Conditions
AC Response
Gain Bandwidth Product GBWP 190 kHz
Phase Margin PM 57 ° G = +1V/V
Slew Rate SR 0.08 V/µs
Noise
Input Noise Voltage E
ni
—2.2 µV
P-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—32 nV/Hz f = 1 kHz
Input Noise Current Density i
ni
—70 fA/Hz f = 1 kHz
Electrical Specifications: Unless otherwise indicated, V
DD
= +2.3V to +5.5V, V
SS
= GND, T
A
= 25°C, V
CM
=V
DD
/2, V
OUT
V
DD
/2,
R
L
= 100 kΩ to V
DD
/2 and C
L
=60pF.
Parameters Sym Min Typ Max Units Conditions
CS Low Specifications
CS
Logic Threshold, Low V
IL
V
SS
—0.2V
DD
V
CS Input Current, Low I
CSL
–1.0 0.01 µA CS = V
SS
CS High Specifications
CS Logic Threshold, High V
IH
0.8 V
DD
—V
DD
V
CS Input Current, High I
CSH
—0.01 2 µACS = V
DD
GND Current I
SS
-2 -0.05 µA CS = V
DD
Amplifier Output Leakage I
O(LEAK)
—10— nACS = V
DD
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time t
ON
—9100µsCS = 0.2V
DD
to V
OUT
= 0.9V
DD
/2,
G = +1 V/V, R
L
= 1 kΩ to V
SS
CS High to Amplifier Output High-Z t
OFF
—0.1— µsCS = 0.8V
DD
to V
OUT
= 0.1V
DD
/2,
G = +1 V/V, R
L
= 1 kΩ to V
SS
CS Hysteresis V
HYST
—0.6— VV
DD
= 5.0V
CS
V
OUT
I
SS
I
CS
V
IL
V
IH
t
ON
t
OFF
-50 nA -50 nA
-19 µA
10 nA 10 nA
High-Z High-Z
(typical)
(typical)
(typical) (typical)
(typical)