Datasheet
MCP6061/2/4
DS22189B-page 4 © 2010 Microchip Technology Inc.
AC ELECTRICAL SPECIFICATIONS
TEMPERATURE SPECIFICATIONS
Open-Loop Gain
DC Open-Loop Gain
(Large Signal)
A
OL
95 115 — dB 0.2V < V
OUT
<(V
DD
-0.2V)
V
CM
= V
SS
Output
Maximum Output Voltage Swing V
OL,
V
OH
V
SS
+15 — V
DD
–15 mV 0.5V input overdrive
Output Short-Circuit Current I
SC
—±6—mAV
DD
= 1.8V
—±27—mAV
DD
= 6.0V
Power Supply
Supply Voltage V
DD
1.8 — 6.0 V
Quiescent Current per Amplifier I
Q
30 60 90 µA I
O
= 0, V
DD
= 6.0V
V
CM
= 0.9V
DD
DC ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +6.0V, V
SS
= GND, T
A
= +25°C, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2 and R
L
= 10 kΩ to V
L
. (Refer to Figure 1-1).
Parameters Sym Min Typ Max Units Conditions
Note 1: Figure 2-13 shows how V
CMR
changed across temperature.
Electrical Characteristics: Unless otherwise indicated, T
A
= +25°C, V
DD
= +1.8 to +6.0V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2, R
L
= 10 kΩ to V
L
and C
L
= 60 pF. (Refer to Figure 1-1).
Parameters Sym Min Typ Max Units Conditions
AC Response
Gain Bandwidth Product GBWP — 730 — kHz
Phase Margin PM — 61 — ° G = +1 V/V
Slew Rate SR — 0.25 — V/µs
Noise
Input Noise Voltage E
ni
— 4.5 — µVp-p f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—25—nV/√Hz f = 10 kHz
Input Noise Current Density i
ni
—0.6—fA/√Hz f = 1 kHz
Electrical Characteristics: Unless otherwise indicated, V
DD
= +1.8V to +6.0V and V
SS
= GND.
Parameters Sym Min Typ Max Units Conditions
Temperature Ranges
Operating Temperature Range T
A
-40 — +125 °C Note 1
Storage Temperature Range T
A
-65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23 θ
JA
— 220.7 — °C/W
Thermal Resistance, 8L-2x3 TDFN θ
JA
—52.5—°C/W
Thermal Resistance, 8L-SOIC θ
JA
— 149.5 — °C/W
Thermal Resistance, 14L-SOIC
θ
JA
—
95.3
—
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
—
100
—
°C/W
Note 1: The internal junction temperature (T
J
) must not exceed the absolute maximum specification of +150°C.