Datasheet

© 2007 Microchip Technology Inc. DS21314G-page 3
MCP601/1R/2/3/4
AC CHARACTERISTICS
MCP603 CHIP SELECT (CS) CHARACTERISTICS
FIGURE 1-1: MCP603 Chip Select (CS)
Timing Diagram.
Electrical Specifications: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.7V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2, and R
L
= 100 kΩ to V
L
, C
L
= 50 pF, and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters Sym Min Typ Max Units Conditions
Frequency Response
Gain Bandwidth Product GBWP — 2.8 — MHz
Phase Margin PM — 50 — ° G = +1 V/V
Step Response
Slew Rate SR — 2.3 — V/µs G = +1 V/V
Settling Time (0.01%) t
settle
— 4.5 — µs G = +1 V/V, 3.8V step
Noise
Input Noise Voltage E
ni
—7—µV
P-P
f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—29—nV/√Hz f = 1 kHz
e
ni
—21—nV/√Hz f = 10 kHz
Input Noise Current Density i
ni
—0.6—fA/√Hz f = 1 kHz
Electrical Specifications: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.7V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, V
L
= V
DD
/2, and R
L
= 100 kΩ to V
L
, C
L
= 50 pF, and CS is tied low. (Refer to Figure 1-2 and Figure 1-3).
Parameters Sym Min Typ Max Units Conditions
CS
Low Specifications
CS
Logic Threshold, Low V
IL
V
SS
— 0.2 V
DD
V
CS
Input Current, Low I
CSL
-1.0 — — µA CS = 0.2V
DD
CS High Specifications
CS
Logic Threshold, High V
IH
0.8 V
DD
—V
DD
V
CS
Input Current, High I
CSH
—0.72.0µACS = V
DD
Shutdown V
SS
current I
Q_SHDN
-2.0 -0.7 — µA CS = V
DD
Amplifier Output Leakage in Shutdown I
O_SHDN
—1—nA
Timing
CS
Low to Amplifier Output Turn-on Time t
ON
—3.110µsCS ≤ 0.2V
DD
, G = +1 V/V
CS
High to Amplifier Output High-Z Time t
OFF
—100—nsCS ≥ 0.8V
DD
, G = +1 V/V, No load.
Hysteresis V
HYST
—0.4—VV
DD
= 5.0V
CS
t
OFF
V
OUT
t
ON
Hi-Z Hi-Z
I
DD
2nA
230 µA
Output Active
I
SS
-700 nA
-230 µA
CS
700 nA
2nA
Current
(typical)
(typical)
(typical)
(typical)
(typical)
(typical)