Datasheet

MCP6021/1R/2/3/4
DS21685D-page 4 © 2009 Microchip Technology Inc.
AC ELECTRICAL CHARACTERISTICS
MCP6023 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, R
L
=10kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters Sym Min Typ Max Units Conditions
Power Supply
Supply Voltage V
DD
2.5 — 5.5 V
Quiescent Current per Amplifier I
Q
0.5 1.0 1.35 mA I
O
= 0
AC Response
Gain Bandwidth Product GBWP — 10 — MHz
Phase Margin PM — 65 — ° G = +1 V/V
Settling Time, 0.2% t
SETTLE
— 250 — ns G = +1 V/V, V
OUT
= 100 mV
p-p
Slew Rate SR — 7.0 — V/µs
Total Harmonic Distortion Plus Noise
f = 1 kHz, G = +1 V/V THD+N — 0.00053 — % V
OUT
= 0.25V to 3.25V (1.75V ± 1.50V
PK
),
V
DD
= 5.0V, BW = 22 kHz
f = 1 kHz, G = +1 V/V, R
L
= 600Ω THD+N — 0.00064 — % V
OUT
= 0.25V to 3.25V (1.75V ± 1.50V
PK
),
V
DD
= 5.0V, BW = 22 kHz
f = 1 kHz, G = +1 V/V THD+N — 0.0014 — % V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
f = 1 kHz, G = +10 V/V THD+N — 0.0009 — % V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
f = 1 kHz, G = +100 V/V THD+N — 0.005 — % V
OUT
= 4V
P-P
, V
DD
= 5.0V, BW = 22 kHz
Noise
Input Noise Voltage E
ni
— 2.9 — µVp-p f = 0.1 Hz to 10 Hz
Input Noise Voltage Density e
ni
—8.7—nV/√Hz f = 10 kHz
Input Noise Current Density i
ni
—3—fA/√Hz f = 1 kHz
Electrical Specifications: Unless otherwise indicated, T
A
= +25°C, V
DD
= +2.5V to +5.5V, V
SS
= GND, V
CM
= V
DD
/2,
V
OUT
≈ V
DD
/2, R
L
=10kΩ to V
DD
/2 and C
L
= 60 pF.
Parameters Sym Min Typ Max Units Conditions
CS
Low Specifications
CS Logic Threshold, Low V
IL
V
SS
—0.2V
DD
V
CS
Input Current, Low I
CSL
-1.0 0.01 — µA CS = V
SS
CS High Specifications
CS Logic Threshold, High V
IH
0.8 V
DD
—V
DD
V
CS Input Current, High I
CSH
— 0.01 2.0 µA CS = V
DD
GND Current I
SS
-2 -0.05 — µA CS = V
DD
Amplifier Output Leakage I
O(LEAK)
—0.01— µACS = V
DD
CS Dynamic Specifications
CS Low to Amplifier Output Turn-on Time t
ON
— 2 10 µs G = +1, V
IN
= V
SS
,
CS
= 0.2V
DD
to V
OUT
= 0.45V
DD
time
CS High to Amplifier Output High-Z Time t
OFF
— 0.01 — µs G = +1, V
IN
= V
SS
,
CS
= 0.8V
DD
to V
OUT
= 0.05V
DD
time
Hysteresis V
HYST
—0.6— VV
DD
= 5.0V, Internal Switch