Datasheet

2008-2013 Microchip Technology Inc. DS22107B-page 37
MCP454X/456X/464X/466X
4.0 FUNCTIONAL OVERVIEW
This Data Sheet covers a family of thirty-two Digital
Potentiometer and Rheostat devices that will be
referred to as MCP4XXX. The MCP4XX1 devices are
the Potentiometer configuration, while the MCP4XX2
devices are the Rheostat configuration.
As the Device Block Diagram shows, there are four
main functional blocks. These are:
POR/BOR Operation
Memory Map
Resistor Network
Serial Interface (I
2
C)
The POR/BOR operation and the Memory Map are
discussed in this section and the Resistor Network and
I
2
C operation are described in their own sections. The
Device Commands commands are discussed in
Section 7.0 “Device Commands”.
4.1 POR/BOR Operation
The Power-on Reset is the case where the device has
power applied to it, starting from the V
SS
level. The
Brown-out Reset occurs when power is applied to the
device, and that power (voltage) drops below the spec-
ified range.
The device’s RAM retention voltage (V
RAM
) is lower
than the POR/BOR voltage trip point (V
POR
/V
BOR
). The
maximum V
POR
/V
BOR
voltage is less than 1.8V.
When V
POR
/V
BOR
< V
DD
< 2.7V, the electrical
performance may not meet the data sheet
specifications. In this region, the device is capable of
reading and writing to its EEPROM and incrementing,
decrementing, reading and writing to its volatile
memory if the proper serial command is executed.
4.1.1 POWER-ON RESET
When the device powers up, the device V
DD
will cross
the V
POR
/V
BOR
voltage. Once the V
DD
voltage crosses
the V
POR
/V
BOR
voltage the following happens:
Volatile wiper register is loaded with value in the
corresponding nonvolatile wiper register
The TCON register is loaded its default value
The device is capable of digital operation
4.1.2 BROWN-OUT RESET
When the device powers down, the device V
DD
will
cross the V
POR
/V
BOR
voltage.
Once the V
DD
voltage decreases below the V
POR
/V
BOR
voltage the following happens:
Serial Interface is disabled
EEPROM Writes are disabled
If the V
DD
voltage decreases below the V
RAM
voltage
the following happens:
Volatile wiper registers may become corrupted
TCON register may become corrupted
As the voltage recovers above the V
POR
/V
BOR
voltage
see Section 4.1.1 “Power-on Reset”.
Serial commands not completed due to a brown-out
condition may cause the memory location (volatile and
nonvolatile) to become corrupted.
4.2 Memory Map
The device memory is 16 locations that are 9-bits wide
(16x9 bits). This memory space contains both volatile
and nonvolatile locations (see Table 4-1).
TABLE 4-1: MEMORY MAP
Address Function Memory Type
00h Volatile Wiper 0 RAM
01h Volatile Wiper 1 RAM
02h Nonvolatile Wiper 0 EEPROM
03h Nonvolatile Wiper 1 EEPROM
04h Volatile TCON Register RAM
05h Status Register RAM
06h Data EEPROM EEPROM
07h Data EEPROM EEPROM
08h Data EEPROM EEPROM
09h Data EEPROM EEPROM
0Ah Data EEPROM EEPROM
0Bh Data EEPROM EEPROM
0Ch Data EEPROM EEPROM
0Dh Data EEPROM EEPROM
0Eh Data EEPROM EEPROM
0Fh Data EEPROM EEPROM