Datasheet

MCP454X/456X/464X/466X
DS22107B-page 56  2008-2013 Microchip Technology Inc.
TABLE 7-2: MEMORY MAP AND THE SUPPORTED COMMANDS
Address
Command Operation
Data
(10-bits)
(1)
Comment
Value Function
00h Volatile Wiper 0 Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
Increment Wiper —
Decrement Wiper —
01h Volatile Wiper 1 Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
Increment Wiper —
Decrement Wiper —
02h Non Volatile Wiper 0 Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
High Voltage Increment — Wiper Lock 0 Disable
High Voltage Decrement — Wiper Lock 0 Enable
03h Non Volatile Wiper 1 Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
High Voltage Increment — Wiper Lock 1 Disable
High Voltage Decrement — Wiper Lock 1 Enable
04h
(2)
Volatile TCON Register Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
05h
(2)
Status Register Read Data
(3)
nn nnnn nnnn
06h
(2)
Data EEPROM Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
07h
(2)
Data EEPROM Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
08h
(2)
Data EEPROM Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
09h
(2)
Data EEPROM Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
0Ah
(2)
Data EEPROM Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
0Bh
(2)
Data EEPROM Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
0Ch
(2)
Data EEPROM Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
0Dh
(2)
Data EEPROM Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
0Eh
(2)
Data EEPROM Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
0Fh Data EEPROM Write Data nn nnnn nnnn
Read Data
(3)
nn nnnn nnnn
High Voltage Increment — Write Protect Disable
High Voltage Decrement — Write Protect Enable
Note 1: The Data Memory is only 9-bits wide, so the MSb is ignored by the device.
2: Increment or Decrement commands are invalid for these addresses.
3: I
2
C read operation will read 2 bytes, of which the 10-bits of data are contained within.