Datasheet

MCP454X/456X/464X/466X
DS22107B-page 34  2008-2013 Microchip Technology Inc.
Note: Unless otherwise indicated, T
A
= +25°C,
V
DD
= 5V, V
SS
= 0V.
FIGURE 2-56: Nominal EEPROM Write
Cycle Time vs. V
DD
and Temperature.
FIGURE 2-57: POR/BOR Trip Point vs.
V
DD
and Temperature.
2.1 Test Circuits
FIGURE 2-58: -3 db Gain vs. Frequency
Test.
FIGURE 2-59: R
BW
and R
W
Measurement.
3.0
3.2
3.4
3.6
3.8
4.0
4.2
-40 0 40 80 120
Temperature (°C)
t
WC
(ms)
0
0.2
0.4
0.6
0.8
1
1.2
-40 0 40 80 120
Temperature (°C)
V
DD
(V)
2.7V
5.5V
+
-
V
OUT
2.5V DC
+5V
A
B
W
Offset
GND
V
IN
A
B
W
I
W
V
W
floating
R
BW
= V
W
/I
W
V
A
V
B
R
W
= (V
W
-V
A
)/I
W