Datasheet

MCP434X/436X
DS22233A-page 32 © 2009 Microchip Technology Inc.
4.2 Memory Map
The device memory is 16 locations that are 9-bits wide
(16x9 bits). This memory space contains both volatile
and non-volatile locations (see Table 4 -1 ).
TABLE 4-1: MEMORY MAP AND THE SUPPORTED COMMANDS
Address Function
Memory
Type
Allowed Commands Disallowed Commands
(2)
Factory
Initialization
00h Volatile Wiper 0 RAM Read, Write,
Increment, Decrement
—
—
01h Volatile Wiper 1 RAM Read, Write,
Increment, Decrement
—
—
02h Non-Volatile Wiper 0 EEPROM Read, Write
(1)
Increment, Decrement 8-bit 80h
7-bit 40h
03h Non-Volatile Wiper 1 EEPROM Read, Write
(1)
Increment, Decrement 8-bit 80h
7-bit 40h
04h Volatile
TCON0 Register
RAM Read, Write Increment, Decrement
—
05h Status Register RAM Read Write, Increment, Decrement
—
06h Volatile Wiper 2 RAM Read, Write,
Increment, Decrement
—
—
07h Volatile Wiper 3 RAM Read, Write,
Increment, Decrement
—
—
08h Non-Volatile Wiper 2 EEPROM Read, Write
(1)
Increment, Decrement 8-bit 80h
7-bit 40h
09h Non-Volatile Wiper 3 EEPROM Read, Write
(1)
Increment, Decrement 8-bit 80h
7-bit 40h
0Ah Volatile
TCON1 Register
RAM Read, Write Increment, Decrement
—
0Bh Data EEPROM EEPROM Read, Write
(1)
Increment, Decrement 000h
0Ch Data EEPROM EEPROM Read, Write
(1)
Increment, Decrement 000h
0Dh Data EEPROM EEPROM Read, Write
(1)
Increment, Decrement 000h
0Eh Data EEPROM EEPROM Read, Write
(1)
Increment, Decrement 000h
0Fh Data EEPROM EEPROM Read, Write
(1)
Increment, Decrement 000h
Note 1: When an EEPROM write is active, these are invalid commands and will generate an error condition. The
user should use a read of the Status register to determine when the write cycle has completed. To exit the
error condition, the user must take the CS
pin to the V
IH
level and then back to the active state (V
IL
or
V
IHH
).
2: This command on this address will generate an error condition. To exit the error condition, the user must
take the CS
pin to the V
IH
level and then back to the active state (V
IL
or V
IHH
).