Datasheet
MCP2510
DS21291E-page 62 2002 Microchip Technology Inc.
TABLE 12-1: DC CHARACTERISTICS
DC Characteristics
Industrial (I): T
AMB
= -40°C to +85°C V
DD
= 3.0V to 5.5V
Extended (E): T
AMB
= -40°C to +125°C V
DD
= 4.5V to 5.5V
Param.
No. Sym Characteristic Min Max Units Conditions
V
DD
Supply Voltage 3.0 5.5 V
V
RET
Register Retention Voltage 2.4 — V
High Level Input Voltage Note
V
IH
RXCAN 2 V
DD
+1 V
SCK, CS
, SI, TXnRTS Pins .7 V
DD
V
DD
+1 V
OSC1 .85 V
DD
V
DD
V
RESET .85 V
DD
V
DD
V
Low Level Input Voltage Note
V
IL
RXCAN,TXnRTS Pins -0.3 .15 V
DD
V
SCK, CS
, SI -0.3 0.4 V
OSC1 V
SS
.3 V
DD
V
RESET V
SS
.15 V
DD
V
Low Level Output Voltage
V
OL
TXCAN — 0.6 V I
OL
= -6.0 mA, V
DD
= 4.5V
RXnBF
Pins — 0.6 V I
OL
= -8.5 mA, V
DD
= 4.5V
SO, CLKOUT — 0.6 V I
OL
= -2.1 mA, V
DD
= 4.5V
INT —0.6VI
OL
= -1.6 mA, V
DD
= 4.5V
High Level Output Voltage V
V
OH
TXCAN, RXnBF Pins V
DD
-0.7 — V I
OH
= 3.0 mA, V
DD
= 4.5V, I temp
SO, CLKOUT V
DD
-0.5 — V I
OH
= 400 µA, V
DD
= 4.5V
INT
V
DD
-0.7 — V I
OH
= 1.0 mA, V
DD
= 4.5V
Input Leakage Current
I
LI
All I/O except OSC1 and
TXnRTS pins
-1 +1 µA CS = RESET = V
DD
,
V
IN
= V
SS
to V
DD
OSC1 Pin -5 +5 µA
C
INT
Internal Capacitance
(All Inputs And Outputs)
—7pFT
AMB
= 25°C, f
C
= 1.0 MHz,
V
DD
= 5.0V (Note)
I
DD
Operating Current — 10 mA V
DD
= 5.5V, F
OSC
= 25 MHz,
F
CLK
= 1 MHz, SO = Open
I
DDS
Standby Current (Sleep Mode) — 5 µA CS, TXnRTS = V
DD
, Inputs tied to
V
DD
or V
SS
Note: This parameter is periodically sampled and not 100% tested.