Datasheet

MCP2502X/5X
DS21664D-page 52 © 2007 Microchip Technology Inc.
9.2 DC Characteristics
DC Characteristics
Industrial (I): TAMB = -40°C to +85°C VCC = 2.7V to 5.5V
Automotive (E): T
AMB = -40°C to +125°C VCC = 4.5V to 5.5V
Param.
No.
Sym Characteristics Min Max Units Test Conditions
V
DD Supply Voltage 2.7
4.5
5.5
5.5
V
V
XT and LP OSC configuration
HS OSC configuration (Note 2)
SVDD V
DD Rise Rate to ensure
internal power-on reset signal
0.05 — V/ms (Note 3)
High-level input voltage
V
IH GPIO pins 2 VDD+0.3 V
V
IH RXCAN (Schmitt Trigger) .7 VDD VDD V
OSC1 .85 VDD VDD V
Low-level input voltage —
V
IL RXCAN (Schmitt Trigger) VSS 0.2 VDD V
VIL GPIO pins -0.3 0.5V V
OSC1 VSS 0.2 VDD V
Low-level output voltage
V
OL TXCAN GPIO pins — 0.6 V IOL = 8.5 mA, VDD = 4.5V
High-level output voltage V
V
OH TXCAN, GPIO pins VDD -0.7 — V IOH =-3.0 mA, VDD = 4.5V,
I-temp
Input leakage current
I
LI All I/O except OSC1, GP7 -1 +1 µA
OSC1, GP7 pin -5 +5 µA
CINT Internal Capacitance
(all inputs and outputs, except
GP7)
—7pFTAMB = 25°C, fC = 1.0 MHz,
V
DD = 5.0V (Note 3)
GP7 — 15 pF
I
DD Operating Current — 20 mA XT OSC VDD = 5.5V;
F
OSC =25MHz
IDDS Standby Current
(CAN Sleep Mode)
— 30 µA Inputs tied to VDD or VSS
Note 1: This is the limit to which V
DD
can be lowered in SLEEP mode without losing RAM data.
2: Refer to Figure 9-1.
3: This parameter is periodically sampled and not 100% tested.