Datasheet

MCP2021/2/1P/2P
DS22018F-page 28 © 2005-2012 Microchip Technology Inc.
2.4 Thermal Specifications
Voltage Regulator
Bus Activity Debounce Time tBDB 5 10 20 µs Bus debounce time
Bus Activity to Voltage
Regulator Enabled
tBACTVE 100 250 500 µs After bus debounce time
Voltage Regulator Enabled
to Ready
t
VEVR
— — 1200 µs
(Note 1)
Chip Select to Operation
Ready
t
CSOR
— — 500 µs
(Note 1)
Chip Select to Power-Down tCSPD ——80µs
Short-Circuit to Shut-Down t
SHUTDOWN 20 — 100 µs
RESET Timing
VREG OK Detect to RESET
Inactive
tRPU
——10.0µs
V
REG OK Detect to RESET
Active
tRPD
——10.0µs
Note 1: Time depends on external capacitance and load.
THERMAL CHARACTERISTICS
Parameter Symbol Typ Max Units Test Conditions
Recovery Temperature θ
RECOVERY +140
—
°C
Shutdown Temperature θSHUTDOWN +150
—
°C
Short Circuit Recovery Time tTHERM 1.5 5.0 ms
Thermal Package Resistances
Thermal Resistance, 8L-DFN θ
JA 35.7 — °C/W
Thermal Resistance, 8L-PDIP θJA 89.3 — °C/W
Thermal Resistance, 8L-SOIC θ
JA 149.5 — °C/W
Thermal Resistance, 14L-PDIP θJA 70 — °C/W
Thermal Resistance, 14L-SOIC θJA 95.3 — °C/W
Thermal Resistance, 14L-TSSOP θ
JA 100 — °C/W
Note 1: The maximum power dissipation is a function of TJMAX, ΘJA and ambient temperature T
A
. The maximum
allowable power dissipation at an ambient temperature is P
D = (TJMAX - TA) ΘJA. If this dissipation is
exceeded, the die temperature will rise above 150°C and the MCP2021 will go into thermal shutdown.
2.3 AC Specification (Continued)
AC CHARACTERISTICS
V
BB = 6.0V to 18.0V; TA = -40°C to +125°C
Parameter Sym Min. Typ. Max. Units Test Conditions