Datasheet

MCP2003/4/3A/4A
DS20002230E-page 14  2010-2013 Microchip Technology Inc.
Bus Interface
High-Level Input Voltage V
IH(LBUS) 0.6 VBB — — V Recessive state
Low-Level Input Voltage VIL(LBUS)-8—0.4 VBB V Dominant state
Input Hysteresis VHYS — — 0.175 VBB VVIH(LBUS) – VIL(LBUS)
Low-Level Output Current I
OL(LBUS) 40 — 200 mA Output voltage = 0.1 VBB,
V
BB = 12V
High-Level Output Current IOH(LBUS)——20µA
Pull-up Current on Input I
PU(LBUS)5—180µA~30k internal pull-up
@ V
IH (LBUS) = 0.7 VBB
Short Circuit Current Limit ISC 50 — 200 mA (Note 1)
High-Level Output Voltage V
OH(LBUS) 0.9 VBB —VBB V
Driver Dominant Voltage V_LOSUP ——1.2 VVBB = 7V, RLOAD = 500
Driver Dominant Voltage V_HISUP ——2.0 VVBB = 18V, RLOAD = 500
Driver Dominant Voltage V_
LOSUP-1K 0.6 — — V VBB = 7V, RLOAD = 1 k
Driver Dominant Voltage V_HISUP-1K 0.8 — — V VBB = 18V, RLOAD = 1 k
Input Leakage Current
(at the receiver during
dominant bus level)
IBUS_PAS_DOM -1 -0.4 — mA Driver off,
V
BUS = 0V,
V
BB = 12V
Input Leakage Current
(at the receiver during
recessive bus level)
IBUS_PAS_REC — 12 20 µA Driver off,
8V < V
BB < 18V
8V < V
BUs < 18V
V
BUS  VBB
Leakage Current
(disconnected from ground)
IBUS_NO_GND -10 1.0 +10 µA GNDDEVICE = VBB,
0V < V
BUS < 18V,
V
BB = 12V
Leakage Current
(disconnected from V
BB)
I
BUS_NO_VBB —— 10 µAVBB = GND,
0 < V
BUS < 18V,
(Note 2)
Receiver Center Voltage V
BUS_CNT 0.475 VBB 0.5
V
BB
0.525 VBB VVBUS_CNT = (VIL (LBUS) +
V
IH (LBUS))/2
Slave Termination R
SLAVE 20 30 47 k
Capacitance of Slave Node C
SLAVE 50 pF
2.3 DC Specifications (Continued)
DC Specifications
Electrical Characteristics:
Unless otherwise indicated, all limits are specified for:
V
BB = 6.0V to 30.0V
T
A = -40°C to +125°C
Parameter Sym Min. Typ. Max. Units Conditions
Note 1: Internal current limited. 2.0 ms maximum recovery time (R
LBUS = 0, TX = 0.4 VREG, VLBUS = VBB).
2: Node has to sustain the current that can flow under this condition; bus must be operational under this
condition.