Datasheet
MCP2003/4/3A/4A
DS20002230E-page 12 2010-2013 Microchip Technology Inc.
2.0 ELECTRICAL CHARACTERISTICS
2.1 Absolute Maximum Ratings†
VIN DC Voltage on RXD, TXD, FAULT/TXE, CS ............................................................................................. -0.3 to +43V
V
IN DC Voltage on WAKE and VREN .............................................................................................................-0.3 to +VBB
V
BB Battery Voltage, continuous, non-operating (Note 1)............................................................................. -0.3 to +40V
V
BB Battery Voltage, non-operating (LIN bus recessive) (Note 2) ................................................................ -0.3 to +43V
V
BB Battery Voltage, transient ISO 7637 Test 1 ..................................................................................................... -200V
V
BB Battery Voltage, transient ISO 7637 Test 2a ...................................................................................................+150V
V
BB Battery Voltage, transient ISO 7637 Test 3a ................................................................................................... -300V
V
BB Battery Voltage, transient ISO 7637 Test 3b ...................................................................................................+200V
V
LBUS Bus Voltage, continuous...................................................................................................................... -18 to +40V
V
LBUS Bus Voltage, transient (Note 3)........................................................................................................... -27 to +43V
I
LBUS Bus Short Circuit Current Limit ....................................................................................................................200 mA
ESD protection on LIN, V
BB, WAKE (IEC 61000-4-2) (Note 4)............................................................................... ±8 KV
ESD protection on LIN, V
BB (Human Body Model) (Note 5)................................................................................... ±8 KV
ESD protection on all other pins (Human Body Model) (Note 5) ............................................................................ ±4 KV
ESD protection on all pins (Charge Device Model) (Note 6)................................................................................... ±2 KV
ESD protection on all pins (Machine Model) (Note 7).............................................................................................±200V
Maximum Junction Temperature.............................................................................................................................150C
Storage Temperature...................................................................................................................................-65 to +150C
Note 1: LIN 2.x compliant specification.
2: SAE J2602 compliant specification.
3: ISO 7637/1 load dump compliant (t < 500 ms).
4: According to IEC 61000-4-2, 330 ohm, 150 pF and Transceiver EMC Test Specifications [2] to [4]. For WAKE
pin to meet the specification, series resistor must be in place (refer to Example 1-2).
5: According to AEC-Q100-002 / JESD22-A114.
6: According to AEC-Q100-011B.
7: According to AEC-Q100-003 / JESD22-A115.
2.2 Nomenclature used in this document
Some terms and names used in this data sheet deviate from those referred to in the LIN specifications. Equivalent
values are shown below.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device, at those or any other conditions above those
indicated in the operational listings of this specification, is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
LIN 2.1 Name Term used in the following tables Definition
V
BAT
not used ECU operating voltage
V
SUP
VBB Supply voltage at device pin
I
BUS_LIM
ISC Current Limit of driver
V
BUSREC
VIH(LBUS) Recessive state
V
BUSDOM
VIL(LBUS) Dominant state