Datasheet

MCP19111
DS22331A-page 26  2013 Microchip Technology Inc.
GPIO Input High Voltage V
IH
2.0 — V
DD
V I/O Port with TTL buffer,
V
DD
=5V, T
A
=+90°C
0.8V
DD
—V
DD
V I/O Port with Schmitt Trigger
buffer, V
DD
=5V, T
A
= +90°C
0.8V
DD
—V
DD
VMCLR, T
A
= +90°C
Thermal Shutdown
Thermal Shutdown T
SHD
—160—°C
Thermal Shutdown
Hysteresis
T
SHD_HYS
—20—°C
4.3 Thermal Specifications
Parameter Symbol Min Typ Max Units Test Conditions
Temperature Ranges
Specified Temperature Range T
A
-40 — +125 C
Operating Temperature Range T
A
-40 — +125 C
Maximum Junction Temperature T
J
——+150C
Storage Temperature Range T
A
-65 — +150 C
Thermal Package Resistances
Thermal Resistance, 28L-QFN 5x5 
JA
—35.3—C/W
4.2 Electrical Characteristics (Continued)
Electrical Specifications: Unless otherwise noted, V
IN
= 12V, V
REF
= 1.2V, F
SW
=300kHz, T
A
=+25°C.
Boldface specifications apply over the T
A
range of -40°C to +125°C.
Parameter Symbol Min Typ Max Units Conditions
Note 1: Ensured by design. Not production tested.
2: V
DD-OUT
is the voltage present at the V
DD
pin. V
DD
is the internally generated bias voltage.
3: This is the total source current for all GPIO pins combined. Individually, each pin can source a maximum of
25 mA.
4: PE1 = 0x00h, ABECON = 0x00h, ATSTCON = 0x80h, WPUGPA = 0x00h, WPUGPB = 0x00h, and
SLEEP command issued to PIC core, see SECTION 16.0.