Datasheet
2011-2013 Microchip Technology Inc. DS20002276C-page 21
MCP1754/MCP1754S
5.0 APPLICATION CIRCUITS AND
ISSUES
5.1 Typical Application
The MCP1754/MCP1754S is most commonly used as
a voltage regulator. Its low quiescent current and low
dropout voltage make it ideal for many battery-powered
applications.
FIGURE 5-1: Typical Application Circuit.
5.1.1 APPLICATION INPUT CONDITIONS
5.2 Power Calculations
5.2.1 POWER DISSIPATION
The internal power dissipation of the MCP1754/
MCP1754S is a function of input voltage, output
voltage and output current. The power dissipation, as a
result of the quiescent current draw, is so low that it is
insignificant (56.0 µA x V
IN
). The following equation
can be used to calculate the internal power dissipation
of the LDO.
EQUATION
The maximum continuous operating junction
temperature specified for the MCP1754/MCP1754S is
+150
°C. To estimate the internal junction temperature
of the MCP1754/MCP1754S, the total internal power
dissipation is multiplied by the thermal resistance from
junction to ambient (R
JA
). The thermal resistance from
junction to ambient for the SOT23A pin package is
estimated at 336
°C/W.
EQUATION
The maximum power dissipation capability of a
package is calculated given the junction-to-ambient
thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION
EQUATION
EQUATION
Package Type = SOT23
Input Voltage Range = 3.6V to 4.8V
V
IN
maximum = 4.8V
V
OUT
typical = 1.8V
I
OUT
= 50 mA maximum
MCP1754S
GND
V
OUT
V
IN
C
IN
1µF Ceramic
C
OUT
1µF Ceramic
V
OUT
V
IN
3.6V to 4.8V
1.8V
I
OUT
50 mA
P
LDO
V
IN MAX
V
OUT MIN
–I
OUT MAX
=
P
LDO
= LDO Pass device internal power
dissipation
V
IN(MAX)
= Maximum input voltage
V
OUT(MIN)
= LDO minimum output voltage
T
JMAX
P
TOTAL
R
JA
T
AMAX
+=
T
J(MAX)
= Maximum continuous junction
temperature
P
TOTAL
= Total device power dissipation
R
JA
= Thermal resistance from junction to
ambient
T
A(MAX)
= Maximum ambient temperature
P
DMAX
T
JMAX
T
AMAX
–
R
JA
---------------------------------------------------=
P
D(MAX)
= Maximum device power dissipation
T
J(MAX)
= Maximum continuous junction
temperature
T
A(MAX)
= Maximum ambient temperature
R
JA
= Thermal resistance from junction to
ambient
T
JRISE
P
DMAX
R
JA
=
T
J(RISE)
= Rise in device junction temperature
over the ambient temperature
P
D(MAX
= Maximum device power dissipation
R
JA
= Thermal resistance from junction to
ambient
T
J
T
JRISE
T
A
+=
T
J
= Junction Temperature
T
J(RISE)
= Rise in device junction temperature
over the ambient temperature
T
A
= Ambient temperature