Datasheet

 2011-2013 Microchip Technology Inc. DS20002276C-page 7
MCP1754/MCP1754S
AC Performance
Output Delay From V
IN
To
V
OUT
= 90% V
REG
T
DELAY
—240— µsV
IN
= 0V to 16V, V
OUT
= 90% V
R
,
t
r (VIN)
= 5V/µs,
C
OUT
= 1 µF, SHDN = V
IN
Output Delay From V
IN
To
V
OUT
> 0.1V
T
DELAY_START
—80 — µsV
IN
= 0V to 16V, V
OUT
 0.1V,
t
r (VIN)
= 5V/µs,
C
OUT
= 1 µF, SHDN = V
IN
Output Delay From SHDN
to V
OUT
= 90% V
REG
T
DELAY_SHDN
—160— µsV
IN
= 16V, V
OUT
= 90% V
R
,
C
OUT
= 1 µF, SHDN = GND to V
IN
Output Noise e
N
—3 —µV/(Hz)
1/2
I
L
= 50 mA, f = 1 kHz,
C
OUT
= 1 µF
Power Supply Ripple
Rejection Ratio
PSRR — 72 — dB V
R
= 5V, f = 1 kHz, I
L
= 150 mA,
V
INAC
= 1V pk-pk, C
IN
= 0 µF,
V
IN
= V
R
+ 1.5V
Thermal Shutdown
Temperature
T
SD
—150— °CNote 6
Thermal Shutdown
Hysteresis
TSD — 10 — °C
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise specified, all limits are established for V
IN
= V
R
+ 1V, Note 1, I
LOAD
= 1 mA,
C
OUT
= 1 µF (X7R), C
IN
= 1 µF (X7R), T
A
= +25°C, t
r(VIN)
= 0.5V/µs, SHDN = V
IN
, PWRGD = 10K to V
OUT
.
Boldface type applies for junction temperatures, T
J
(Note 7) of -40°C to +125°C.
Parameters Sym. Min. Typ. Max. Units Conditions
Note 1: The minimum V
IN
must meet two conditions: V
IN
3.6V and V
IN
V
R
+ V
DROPOUT(MAX)
.
2: V
R
is the nominal regulator output voltage when the input voltage V
IN
= V
Rated
+ V
DROPOUT(MAX)
or V
IN
= 3.6V
(whichever is greater); I
OUT
= 1 mA.
3: TCV
OUT
= (V
OUT-HIGH
–V
OUT-LOW
) *10
6
/(V
R
* Temperature), V
OUT-HIGH
= highest voltage measured over the
temperature range. V
OUT-LOW
= lowest voltage measured over the temperature range.
4: Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV
OUT
.
5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below the output
voltage value that was measured with an applied input voltage of V
IN
= V
R
+ 1V or V
IN
= 3.6V (whichever is greater).
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction
temperature and the thermal resistance from junction to air (i.e., T
A
, T
J
, 
JA
). Exceeding the maximum allowable power
dissipation causes the device operating junction temperature to exceed the maximum 150°C rating. Sustained junction
temperatures above +150°C can impact the device reliability.
7: The junction temperature is approximated by soaking the device under test at an ambient temperature equal to the
desired junction temperature. The test time is small enough such that the rise in the junction temperature over the
ambient temperature is not significant.